MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES
The electron energy band gap in one monomolecular layer of molybdenum dichalcogenide MoS2 is reduced upon substitution of S atoms by Te ones from 1,84 to 1,17 eV in the case of MoTe2. Both MoTe2 and MoS2 compounds in a bulk phase are indirect-gap semiconductors while one monomolecular layer of MoS2-...
| Main Authors: | , , |
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/676 |
| _version_ | 1797881057713848320 |
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| author | A. V. Krivosheeva V. L. Shaposhnikov V. E. Borisenko |
| author_facet | A. V. Krivosheeva V. L. Shaposhnikov V. E. Borisenko |
| author_sort | A. V. Krivosheeva |
| collection | DOAJ |
| description | The electron energy band gap in one monomolecular layer of molybdenum dichalcogenide MoS2 is reduced upon substitution of S atoms by Te ones from 1,84 to 1,17 eV in the case of MoTe2. Both MoTe2 and MoS2 compounds in a bulk phase are indirect-gap semiconductors while one monomolecular layer of MoS2- x Tex compounds are transforming into direct-gap compounds for x < 0,5 or x > 1,5. The band gap dependence has a linear behavior in the case when the concentration of Te atoms is smaller than the concentration of S atoms. |
| first_indexed | 2024-04-10T03:14:02Z |
| format | Article |
| id | doaj.art-08e5a2f324c7404b80b2110bf913f42e |
| institution | Directory Open Access Journal |
| issn | 1729-7648 |
| language | Russian |
| last_indexed | 2024-04-10T03:14:02Z |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj.art-08e5a2f324c7404b80b2110bf913f42e2023-03-13T07:33:16ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-010498101675MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONESA. V. Krivosheeva0V. L. Shaposhnikov1V. E. Borisenko2Белорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиThe electron energy band gap in one monomolecular layer of molybdenum dichalcogenide MoS2 is reduced upon substitution of S atoms by Te ones from 1,84 to 1,17 eV in the case of MoTe2. Both MoTe2 and MoS2 compounds in a bulk phase are indirect-gap semiconductors while one monomolecular layer of MoS2- x Tex compounds are transforming into direct-gap compounds for x < 0,5 or x > 1,5. The band gap dependence has a linear behavior in the case when the concentration of Te atoms is smaller than the concentration of S atoms.https://doklady.bsuir.by/jour/article/view/676molybdenum disulfidemonolayerelectronic structureband gap |
| spellingShingle | A. V. Krivosheeva V. L. Shaposhnikov V. E. Borisenko MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki molybdenum disulfide monolayer electronic structure band gap |
| title | MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES |
| title_full | MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES |
| title_fullStr | MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES |
| title_full_unstemmed | MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES |
| title_short | MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES |
| title_sort | mos sub 2 sub band gap modification upon replacement of sulfur atoms by tellurium ones |
| topic | molybdenum disulfide monolayer electronic structure band gap |
| url | https://doklady.bsuir.by/jour/article/view/676 |
| work_keys_str_mv | AT avkrivosheeva mossub2subbandgapmodificationuponreplacementofsulfuratomsbytelluriumones AT vlshaposhnikov mossub2subbandgapmodificationuponreplacementofsulfuratomsbytelluriumones AT veborisenko mossub2subbandgapmodificationuponreplacementofsulfuratomsbytelluriumones |