Interference of electrons in backscattering through a quantum point contact

Interference of electrons in backscattering through a quantum point contact

Scanning gate microscopy is used to locally investigate electron transport in a high-mobility two-dimensional electron gas formed in a GaAs/AlGaAs heterostructure. Using quantum point contacts, we observe branches caused by electron backscattering decorated with interference fringes similar to previ...

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Bibliographic Details
Main Authors:	A A Kozikov, C Rössler, T Ihn, K Ensslin, C Reichl, W Wegscheider
Format:	Article
Language:	English
Published:	IOP Publishing 2013-01-01
Series:	New Journal of Physics
Online Access:	https://doi.org/10.1088/1367-2630/15/1/013056

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