Enhanced Thermoelectric Properties of Nb-Doped Ti(FeCoNi)Sb Pseudo-Ternary Half-Heusler Alloys Prepared Using the Microwave Method
Pseudo-ternary half-Heusler thermoelectric materials, which are formed by filling the B sites of traditional ternary half-Heusler thermoelectric materials of ABX with equal atomic proportions of various elements, have attracted more and more attention due to their lower intrinsic lattice thermal con...
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author | Ruipeng Zhang Jianbiao Kong Yangbo Hou Linghao Zhao Junliang Zhu Changcun Li Degang Zhao |
author_facet | Ruipeng Zhang Jianbiao Kong Yangbo Hou Linghao Zhao Junliang Zhu Changcun Li Degang Zhao |
author_sort | Ruipeng Zhang |
collection | DOAJ |
description | Pseudo-ternary half-Heusler thermoelectric materials, which are formed by filling the B sites of traditional ternary half-Heusler thermoelectric materials of ABX with equal atomic proportions of various elements, have attracted more and more attention due to their lower intrinsic lattice thermal conductivity. High-purity and relatively dense Ti<sub>1−<i>x</i></sub>Nb<i><sub>x</sub></i>(FeCoNi)Sb (<i>x</i> = 0, 0.01, 0.03, 0.05, 0.07 and 0.1) alloys were prepared via microwave synthesis combined with rapid hot-pressing sintering, and their thermoelectric properties are investigated in this work. The Seebeck coefficient was markedly increased via Nb substitution at Ti sites, which resulted in the optimized power factor of 1.45 μWcm<sup>−1</sup>K<sup>−2</sup> for <i>n</i>-type Ti<sub>0.93</sub>Nb<sub>0.07</sub>(FeCoNi)Sb at 750 K. In addition, the lattice thermal conductivity was largely decreased due to the increase in phonon scattering caused by point defects, mass fluctuation and strain fluctuation introduced by Nb-doping. At 750 K, the lattice thermal conductivity of Ti<sub>0.97</sub>Nb<sub>0.03</sub>(FeCoNi)Sb is 2.37 Wm<sup>−1</sup>K<sup>−1</sup>, which is 55% and 23% lower than that of TiCoSb and Ti(FeCoNi)Sb, respectively. Compared with TiCoSb, the <i>ZT</i> of the Ti<sub>1−<i>x</i></sub>Nb<i><sub>x</sub></i>(FeCoNi)Sb samples were significantly increased. The average <i>ZT</i> values of the Nb-doped pseudo-ternary half-Heusler samples were dozens of times that of the TiCoSb prepared using the same process. |
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spelling | doaj.art-096d992e0bf1466c8f5b6cf1f5537b832023-11-19T01:58:49ZengMDPI AGMaterials1996-19442023-08-011616552810.3390/ma16165528Enhanced Thermoelectric Properties of Nb-Doped Ti(FeCoNi)Sb Pseudo-Ternary Half-Heusler Alloys Prepared Using the Microwave MethodRuipeng Zhang0Jianbiao Kong1Yangbo Hou2Linghao Zhao3Junliang Zhu4Changcun Li5Degang Zhao6School of Materials Science and Engineering, University of Jinan, Jinan 250022, ChinaHeze Institute of Product Inspection and Testing, Heze 274000, ChinaHeze Institute of Product Inspection and Testing, Heze 274000, ChinaSchool of Materials Science and Engineering, University of Jinan, Jinan 250022, ChinaSchool of Materials Science and Engineering, University of Jinan, Jinan 250022, ChinaSchool of Materials Science and Engineering, University of Jinan, Jinan 250022, ChinaSchool of Materials Science and Engineering, University of Jinan, Jinan 250022, ChinaPseudo-ternary half-Heusler thermoelectric materials, which are formed by filling the B sites of traditional ternary half-Heusler thermoelectric materials of ABX with equal atomic proportions of various elements, have attracted more and more attention due to their lower intrinsic lattice thermal conductivity. High-purity and relatively dense Ti<sub>1−<i>x</i></sub>Nb<i><sub>x</sub></i>(FeCoNi)Sb (<i>x</i> = 0, 0.01, 0.03, 0.05, 0.07 and 0.1) alloys were prepared via microwave synthesis combined with rapid hot-pressing sintering, and their thermoelectric properties are investigated in this work. The Seebeck coefficient was markedly increased via Nb substitution at Ti sites, which resulted in the optimized power factor of 1.45 μWcm<sup>−1</sup>K<sup>−2</sup> for <i>n</i>-type Ti<sub>0.93</sub>Nb<sub>0.07</sub>(FeCoNi)Sb at 750 K. In addition, the lattice thermal conductivity was largely decreased due to the increase in phonon scattering caused by point defects, mass fluctuation and strain fluctuation introduced by Nb-doping. At 750 K, the lattice thermal conductivity of Ti<sub>0.97</sub>Nb<sub>0.03</sub>(FeCoNi)Sb is 2.37 Wm<sup>−1</sup>K<sup>−1</sup>, which is 55% and 23% lower than that of TiCoSb and Ti(FeCoNi)Sb, respectively. Compared with TiCoSb, the <i>ZT</i> of the Ti<sub>1−<i>x</i></sub>Nb<i><sub>x</sub></i>(FeCoNi)Sb samples were significantly increased. The average <i>ZT</i> values of the Nb-doped pseudo-ternary half-Heusler samples were dozens of times that of the TiCoSb prepared using the same process.https://www.mdpi.com/1996-1944/16/16/5528thermoelectrichalf-Heuslerpseudo-ternary |
spellingShingle | Ruipeng Zhang Jianbiao Kong Yangbo Hou Linghao Zhao Junliang Zhu Changcun Li Degang Zhao Enhanced Thermoelectric Properties of Nb-Doped Ti(FeCoNi)Sb Pseudo-Ternary Half-Heusler Alloys Prepared Using the Microwave Method Materials thermoelectric half-Heusler pseudo-ternary |
title | Enhanced Thermoelectric Properties of Nb-Doped Ti(FeCoNi)Sb Pseudo-Ternary Half-Heusler Alloys Prepared Using the Microwave Method |
title_full | Enhanced Thermoelectric Properties of Nb-Doped Ti(FeCoNi)Sb Pseudo-Ternary Half-Heusler Alloys Prepared Using the Microwave Method |
title_fullStr | Enhanced Thermoelectric Properties of Nb-Doped Ti(FeCoNi)Sb Pseudo-Ternary Half-Heusler Alloys Prepared Using the Microwave Method |
title_full_unstemmed | Enhanced Thermoelectric Properties of Nb-Doped Ti(FeCoNi)Sb Pseudo-Ternary Half-Heusler Alloys Prepared Using the Microwave Method |
title_short | Enhanced Thermoelectric Properties of Nb-Doped Ti(FeCoNi)Sb Pseudo-Ternary Half-Heusler Alloys Prepared Using the Microwave Method |
title_sort | enhanced thermoelectric properties of nb doped ti feconi sb pseudo ternary half heusler alloys prepared using the microwave method |
topic | thermoelectric half-Heusler pseudo-ternary |
url | https://www.mdpi.com/1996-1944/16/16/5528 |
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