An all phosphorene lattice nanometric spin valve
Abstract Phosphorene is a unique semiconducting two-dimensional platform for enabling spintronic devices integrated with phosphorene nanoelectronics. Here, we have designed an all phosphorene lattice lateral spin valve device, conceived via patterned magnetic substituted atoms of 3d-block elements a...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-04-01
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| Series: | Scientific Reports |
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| Online Access: | https://doi.org/10.1038/s41598-024-58589-4 |
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| author | P. Kumari S. Majumder S. Kar S. Rani A. K. Nair K. Kumari M. Venkata Kamalakar S. J. Ray |
| author_facet | P. Kumari S. Majumder S. Kar S. Rani A. K. Nair K. Kumari M. Venkata Kamalakar S. J. Ray |
| author_sort | P. Kumari |
| collection | DOAJ |
| description | Abstract Phosphorene is a unique semiconducting two-dimensional platform for enabling spintronic devices integrated with phosphorene nanoelectronics. Here, we have designed an all phosphorene lattice lateral spin valve device, conceived via patterned magnetic substituted atoms of 3d-block elements at both ends of a phosphorene nanoribbon acting as ferromagnetic electrodes in the spin valve. Through First-principles based calculations, we have extensively studied the spin-dependent transport characteristics of the new spin valve structures. Systematic exploration of the magnetoresistance (MR) of the spin valve for various substitutional atoms and bias voltage resulted in a phase diagram offering a colossal MR for V and Cr-substitutional atoms. Such MR can be directly attributed to their specific electronic structure, which can be further tuned by a gate voltage, for electric field controlled spin valves. The spin-dependent transport characteristics here reveal new features such as negative conductance oscillation and switching of the sign of MR due to change in the majority spin carrier type. Our study creates possibilities for the design of nanometric spin valves, which could enable integration of memory and logic elements for all phosphorene 2D processors. |
| first_indexed | 2024-04-24T07:15:50Z |
| format | Article |
| id | doaj.art-0999f0a31da44cdfaccf81171854e9ba |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-24T07:15:50Z |
| publishDate | 2024-04-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-0999f0a31da44cdfaccf81171854e9ba2024-04-21T11:17:19ZengNature PortfolioScientific Reports2045-23222024-04-0114111010.1038/s41598-024-58589-4An all phosphorene lattice nanometric spin valveP. Kumari0S. Majumder1S. Kar2S. Rani3A. K. Nair4K. Kumari5M. Venkata Kamalakar6S. J. Ray7Department of Physics, Indian Institute of Technology PatnaDepartment of Physics, Indian Institute of Technology PatnaDepartment of Physics, Indian Institute of Technology PatnaDepartment of Physics, Indian Institute of Technology PatnaDepartment of Physics, Indian Institute of Technology PatnaDepartment of Physics, Indian Institute of Technology PatnaDepartment of Physics and Astronomy, Uppsala UniversityDepartment of Physics, Indian Institute of Technology PatnaAbstract Phosphorene is a unique semiconducting two-dimensional platform for enabling spintronic devices integrated with phosphorene nanoelectronics. Here, we have designed an all phosphorene lattice lateral spin valve device, conceived via patterned magnetic substituted atoms of 3d-block elements at both ends of a phosphorene nanoribbon acting as ferromagnetic electrodes in the spin valve. Through First-principles based calculations, we have extensively studied the spin-dependent transport characteristics of the new spin valve structures. Systematic exploration of the magnetoresistance (MR) of the spin valve for various substitutional atoms and bias voltage resulted in a phase diagram offering a colossal MR for V and Cr-substitutional atoms. Such MR can be directly attributed to their specific electronic structure, which can be further tuned by a gate voltage, for electric field controlled spin valves. The spin-dependent transport characteristics here reveal new features such as negative conductance oscillation and switching of the sign of MR due to change in the majority spin carrier type. Our study creates possibilities for the design of nanometric spin valves, which could enable integration of memory and logic elements for all phosphorene 2D processors.https://doi.org/10.1038/s41598-024-58589-4NanoelectronicsSpintronics2D magnet |
| spellingShingle | P. Kumari S. Majumder S. Kar S. Rani A. K. Nair K. Kumari M. Venkata Kamalakar S. J. Ray An all phosphorene lattice nanometric spin valve Scientific Reports Nanoelectronics Spintronics 2D magnet |
| title | An all phosphorene lattice nanometric spin valve |
| title_full | An all phosphorene lattice nanometric spin valve |
| title_fullStr | An all phosphorene lattice nanometric spin valve |
| title_full_unstemmed | An all phosphorene lattice nanometric spin valve |
| title_short | An all phosphorene lattice nanometric spin valve |
| title_sort | all phosphorene lattice nanometric spin valve |
| topic | Nanoelectronics Spintronics 2D magnet |
| url | https://doi.org/10.1038/s41598-024-58589-4 |
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