Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes
With the rapid development of graphene technology, today graphene performs well in the application of light-emitting diode (LED) transparent electrodes. Naturally, high-quality contact between the graphene and the GaN underneath is very important. This paper reports a process for nickel-assisted tra...
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| Format: | Article |
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MDPI AG
2022-10-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/10/1497 |
| _version_ | 1827650788592189440 |
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| author | Penghao Tang Fangzhu Xiong Zaifa Du Kai Li Yu Mei Weiling Guo Jie Sun |
| author_facet | Penghao Tang Fangzhu Xiong Zaifa Du Kai Li Yu Mei Weiling Guo Jie Sun |
| author_sort | Penghao Tang |
| collection | DOAJ |
| description | With the rapid development of graphene technology, today graphene performs well in the application of light-emitting diode (LED) transparent electrodes. Naturally, high-quality contact between the graphene and the GaN underneath is very important. This paper reports a process for nickel-assisted transfer-free technology of graphene chemical vapor deposition on GaN. The nickel film plays the dual role of etching mask and growth catalyst, and is removed by the subsequent “penetration etching” process, achieving good direct contact between the graphene and GaN. The results show that the graphene effectively improves the current spreading of GaN-based LEDs and enhances their electrical performance. This scheme avoids the wrinkles and cracks of graphene from the transfer process, and is not only suitable for the combination of graphene and GaN-based LEDs, but also provides a solution for the integration of graphene and other materials. |
| first_indexed | 2024-03-09T20:23:55Z |
| format | Article |
| id | doaj.art-09ae7e0154d54bcfadae61cd6828c75e |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T20:23:55Z |
| publishDate | 2022-10-01 |
| publisher | MDPI AG |
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| series | Crystals |
| spelling | doaj.art-09ae7e0154d54bcfadae61cd6828c75e2023-11-23T23:39:28ZengMDPI AGCrystals2073-43522022-10-011210149710.3390/cryst12101497Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting DiodesPenghao Tang0Fangzhu Xiong1Zaifa Du2Kai Li3Yu Mei4Weiling Guo5Jie Sun6Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, ChinaKey Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, ChinaKey Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, ChinaKey Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, ChinaKey Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, ChinaKey Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, ChinaFujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, ChinaWith the rapid development of graphene technology, today graphene performs well in the application of light-emitting diode (LED) transparent electrodes. Naturally, high-quality contact between the graphene and the GaN underneath is very important. This paper reports a process for nickel-assisted transfer-free technology of graphene chemical vapor deposition on GaN. The nickel film plays the dual role of etching mask and growth catalyst, and is removed by the subsequent “penetration etching” process, achieving good direct contact between the graphene and GaN. The results show that the graphene effectively improves the current spreading of GaN-based LEDs and enhances their electrical performance. This scheme avoids the wrinkles and cracks of graphene from the transfer process, and is not only suitable for the combination of graphene and GaN-based LEDs, but also provides a solution for the integration of graphene and other materials.https://www.mdpi.com/2073-4352/12/10/1497GaNLEDsgraphenetransparent electrodeCVDtransfer-free |
| spellingShingle | Penghao Tang Fangzhu Xiong Zaifa Du Kai Li Yu Mei Weiling Guo Jie Sun Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes Crystals GaN LEDs graphene transparent electrode CVD transfer-free |
| title | Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes |
| title_full | Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes |
| title_fullStr | Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes |
| title_full_unstemmed | Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes |
| title_short | Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes |
| title_sort | nickel assisted transfer free technology of graphene chemical vapor deposition on gan for improving the electrical performance of light emitting diodes |
| topic | GaN LEDs graphene transparent electrode CVD transfer-free |
| url | https://www.mdpi.com/2073-4352/12/10/1497 |
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