Post-growth enhancement of CVD-grown hexagonal boron nitride films on sapphire
This study explores the effect of post-growth annealing on hexagonal boron nitride (hBN) films grown on c-sapphire substrates by chemical vapor deposition as post-growth annealing proves to overcome the equipment limitations of commercial thermal CVD systems and offers a simplistic way to enhance th...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2022-12-01
|
| Series: | Results in Materials |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590048X22000875 |
| _version_ | 1811235456774307840 |
|---|---|
| author | Ranjan Singhal Elena Echeverria David N. McIlroy Raj N. Singh |
| author_facet | Ranjan Singhal Elena Echeverria David N. McIlroy Raj N. Singh |
| author_sort | Ranjan Singhal |
| collection | DOAJ |
| description | This study explores the effect of post-growth annealing on hexagonal boron nitride (hBN) films grown on c-sapphire substrates by chemical vapor deposition as post-growth annealing proves to overcome the equipment limitations of commercial thermal CVD systems and offers a simplistic way to enhance the properties of the as-grown hBN films useful for multiple-wafer scalability, thereby making it a practical approach for industrial manufacturing of high-quality hBN films. hBN films are grown at 1100 °C by CVD process and are annealed up to 1300 °C under nitrogen atmosphere in an annealing furnace system. It is observed that the annealed hBN films are continuous and have a pronounced granular structure as compared to the as-grown hBN films. The annealed BN films retain the 1:1 B:N stoichiometry and the hexagonal phase as observed in the as-grown hBN films. The optical bandgap of the annealed hBN films is augmented from 5.70 eV to 5.82 eV as a result of the annealing treatment, indicating enhanced optical properties. |
| first_indexed | 2024-04-12T11:51:11Z |
| format | Article |
| id | doaj.art-09b21aca84dc49569b30f0493cabebbf |
| institution | Directory Open Access Journal |
| issn | 2590-048X |
| language | English |
| last_indexed | 2024-04-12T11:51:11Z |
| publishDate | 2022-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Materials |
| spelling | doaj.art-09b21aca84dc49569b30f0493cabebbf2022-12-22T03:34:09ZengElsevierResults in Materials2590-048X2022-12-0116100339Post-growth enhancement of CVD-grown hexagonal boron nitride films on sapphireRanjan Singhal0Elena Echeverria1David N. McIlroy2Raj N. Singh3School of Materials Science and Engineering, Oklahoma State University, Tulsa, OK, 74106, USADepartment of Physics, Oklahoma State University, Stillwater, OK, 74078, USADepartment of Physics, Oklahoma State University, Stillwater, OK, 74078, USASchool of Materials Science and Engineering, Oklahoma State University, Tulsa, OK, 74106, USA; Corresponding author.This study explores the effect of post-growth annealing on hexagonal boron nitride (hBN) films grown on c-sapphire substrates by chemical vapor deposition as post-growth annealing proves to overcome the equipment limitations of commercial thermal CVD systems and offers a simplistic way to enhance the properties of the as-grown hBN films useful for multiple-wafer scalability, thereby making it a practical approach for industrial manufacturing of high-quality hBN films. hBN films are grown at 1100 °C by CVD process and are annealed up to 1300 °C under nitrogen atmosphere in an annealing furnace system. It is observed that the annealed hBN films are continuous and have a pronounced granular structure as compared to the as-grown hBN films. The annealed BN films retain the 1:1 B:N stoichiometry and the hexagonal phase as observed in the as-grown hBN films. The optical bandgap of the annealed hBN films is augmented from 5.70 eV to 5.82 eV as a result of the annealing treatment, indicating enhanced optical properties.http://www.sciencedirect.com/science/article/pii/S2590048X22000875Hexagonal boron nitridePost-growth annealingCVD |
| spellingShingle | Ranjan Singhal Elena Echeverria David N. McIlroy Raj N. Singh Post-growth enhancement of CVD-grown hexagonal boron nitride films on sapphire Results in Materials Hexagonal boron nitride Post-growth annealing CVD |
| title | Post-growth enhancement of CVD-grown hexagonal boron nitride films on sapphire |
| title_full | Post-growth enhancement of CVD-grown hexagonal boron nitride films on sapphire |
| title_fullStr | Post-growth enhancement of CVD-grown hexagonal boron nitride films on sapphire |
| title_full_unstemmed | Post-growth enhancement of CVD-grown hexagonal boron nitride films on sapphire |
| title_short | Post-growth enhancement of CVD-grown hexagonal boron nitride films on sapphire |
| title_sort | post growth enhancement of cvd grown hexagonal boron nitride films on sapphire |
| topic | Hexagonal boron nitride Post-growth annealing CVD |
| url | http://www.sciencedirect.com/science/article/pii/S2590048X22000875 |
| work_keys_str_mv | AT ranjansinghal postgrowthenhancementofcvdgrownhexagonalboronnitridefilmsonsapphire AT elenaecheverria postgrowthenhancementofcvdgrownhexagonalboronnitridefilmsonsapphire AT davidnmcilroy postgrowthenhancementofcvdgrownhexagonalboronnitridefilmsonsapphire AT rajnsingh postgrowthenhancementofcvdgrownhexagonalboronnitridefilmsonsapphire |