Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulators
Abstract Amorphous indium tin zinc oxide (a-ITZO)/Bi2Se3 nanoplatelets (NPs) were fabricated using a two-step procedure. First, Bi2Se3 NPs were synthesized through thermal chemical vapor deposition at 600 °C on a glass substrate, and then a-ITZO was deposited on the surface of the Bi2Se3 NPs via mag...
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| Format: | Article |
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Nature Portfolio
2024-01-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-023-50809-7 |
| _version_ | 1797363275602591744 |
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| author | Chih-Chiang Wang An-Ya Lo Ming-Che Cheng Yu-Sung Chang Han-Chang Shih Fuh-Sheng Shieu Tzu-Hsien Tseng He-Ting Tsai |
| author_facet | Chih-Chiang Wang An-Ya Lo Ming-Che Cheng Yu-Sung Chang Han-Chang Shih Fuh-Sheng Shieu Tzu-Hsien Tseng He-Ting Tsai |
| author_sort | Chih-Chiang Wang |
| collection | DOAJ |
| description | Abstract Amorphous indium tin zinc oxide (a-ITZO)/Bi2Se3 nanoplatelets (NPs) were fabricated using a two-step procedure. First, Bi2Se3 NPs were synthesized through thermal chemical vapor deposition at 600 °C on a glass substrate, and then a-ITZO was deposited on the surface of the Bi2Se3 NPs via magnetron sputtering at room-temperature. The crystal structures of the a-ITZO/Bi2Se3 NPs were determined via X-ray diffraction spectroscopy and high-resolution transmission electron microscopy. The elemental vibration modes and binding energies were measured using Raman spectroscopy and X-ray photoelectron spectroscopy. The morphologies were examined using field-emission scanning electron microscopy. The electrical properties of the a-ITZO/Bi2Se3 NPs were evaluated using Hall effect measurements. The bulk carrier concentration of a-ITZO was not affected by the heterostructure with Bi2Se3. In the case of the Bi2Se3 heterostructure, the carrier mobility and conductivity of a-ITZO were increased by 263.6% and 281.4%, respectively, whereas the resistivity of a-ITZO was reduced by 73.57%. This indicates that Bi2Se3 significantly improves the electrical properties of a-ITZO through its heterostructure, expanding its potential applications in electronic and thermoelectric devices. |
| first_indexed | 2024-03-08T16:19:00Z |
| format | Article |
| id | doaj.art-09b2a066fcbc434ead1b8b60217e3727 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-03-08T16:19:00Z |
| publishDate | 2024-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-09b2a066fcbc434ead1b8b60217e37272024-01-07T12:26:32ZengNature PortfolioScientific Reports2045-23222024-01-0114111010.1038/s41598-023-50809-7Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulatorsChih-Chiang Wang0An-Ya Lo1Ming-Che Cheng2Yu-Sung Chang3Han-Chang Shih4Fuh-Sheng Shieu5Tzu-Hsien Tseng6He-Ting Tsai7Department of Chemical and Materials Engineering, National Chin-Yi University of TechnologyDepartment of Chemical and Materials Engineering, National Chin-Yi University of TechnologyDepartment of Materials Science and Engineering, National Chung Hsing UniversityDepartment of Materials Science and Engineering, National Chung Hsing UniversityDepartment of Materials Science and Engineering, National Chung Hsing UniversityDepartment of Materials Science and Engineering, National Chung Hsing UniversityInstrument Center, The Office of Research and Development, National Chung Hsing UniversityInstrument Center, The Office of Research and Development, National Chung Hsing UniversityAbstract Amorphous indium tin zinc oxide (a-ITZO)/Bi2Se3 nanoplatelets (NPs) were fabricated using a two-step procedure. First, Bi2Se3 NPs were synthesized through thermal chemical vapor deposition at 600 °C on a glass substrate, and then a-ITZO was deposited on the surface of the Bi2Se3 NPs via magnetron sputtering at room-temperature. The crystal structures of the a-ITZO/Bi2Se3 NPs were determined via X-ray diffraction spectroscopy and high-resolution transmission electron microscopy. The elemental vibration modes and binding energies were measured using Raman spectroscopy and X-ray photoelectron spectroscopy. The morphologies were examined using field-emission scanning electron microscopy. The electrical properties of the a-ITZO/Bi2Se3 NPs were evaluated using Hall effect measurements. The bulk carrier concentration of a-ITZO was not affected by the heterostructure with Bi2Se3. In the case of the Bi2Se3 heterostructure, the carrier mobility and conductivity of a-ITZO were increased by 263.6% and 281.4%, respectively, whereas the resistivity of a-ITZO was reduced by 73.57%. This indicates that Bi2Se3 significantly improves the electrical properties of a-ITZO through its heterostructure, expanding its potential applications in electronic and thermoelectric devices.https://doi.org/10.1038/s41598-023-50809-7 |
| spellingShingle | Chih-Chiang Wang An-Ya Lo Ming-Che Cheng Yu-Sung Chang Han-Chang Shih Fuh-Sheng Shieu Tzu-Hsien Tseng He-Ting Tsai Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulators Scientific Reports |
| title | Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulators |
| title_full | Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulators |
| title_fullStr | Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulators |
| title_full_unstemmed | Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulators |
| title_short | Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulators |
| title_sort | enhanced electrical properties of amorphous in sn zn oxides through heterostructuring with bi2se3 topological insulators |
| url | https://doi.org/10.1038/s41598-023-50809-7 |
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