Band Structure Near the Dirac Point in HgTe Quantum Wells with Critical Thickness

Mercury telluride (HgTe) thin films with a critical thickness of 6.5 nm are predicted to possess a gapless Dirac-like band structure. We report a comprehensive study on gated and optically doped samples by magnetooptical spectroscopy in the THz range. The quasi-classical analysis of the cyclotron re...

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Main Authors: Alexey Shuvaev, Vlad Dziom, Jan Gospodarič, Elena G. Novik, Alena A. Dobretsova, Nikolay N. Mikhailov, Ze Don Kvon, Andrei Pimenov
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/12/14/2492
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author Alexey Shuvaev
Vlad Dziom
Jan Gospodarič
Elena G. Novik
Alena A. Dobretsova
Nikolay N. Mikhailov
Ze Don Kvon
Andrei Pimenov
author_facet Alexey Shuvaev
Vlad Dziom
Jan Gospodarič
Elena G. Novik
Alena A. Dobretsova
Nikolay N. Mikhailov
Ze Don Kvon
Andrei Pimenov
author_sort Alexey Shuvaev
collection DOAJ
description Mercury telluride (HgTe) thin films with a critical thickness of 6.5 nm are predicted to possess a gapless Dirac-like band structure. We report a comprehensive study on gated and optically doped samples by magnetooptical spectroscopy in the THz range. The quasi-classical analysis of the cyclotron resonance allowed the mapping of the band dispersion of Dirac charge carriers in a broad range of electron and hole doping. A smooth transition through the charge neutrality point between Dirac holes and electrons was observed. An additional peak coming from a second type of holes with an almost density-independent mass of around <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>0.04</mn><msub><mi>m</mi><mn>0</mn></msub></mrow></semantics></math></inline-formula> was detected in the hole-doping range and attributed to an asymmetric spin splitting of the Dirac cone. Spectroscopic evidence for disorder-induced band energy fluctuations could not be detected in present cyclotron resonance experiments.
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spelling doaj.art-09df6ad60cc34453b96198370fc41fc92023-12-01T22:31:30ZengMDPI AGNanomaterials2079-49912022-07-011214249210.3390/nano12142492Band Structure Near the Dirac Point in HgTe Quantum Wells with Critical ThicknessAlexey Shuvaev0Vlad Dziom1Jan Gospodarič2Elena G. Novik3Alena A. Dobretsova4Nikolay N. Mikhailov5Ze Don Kvon6Andrei Pimenov7Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, AustriaInstitute of Science and Technology Austria, 3400 Klosterneuburg, AustriaInstitute of Solid State Physics, Vienna University of Technology, 1040 Vienna, AustriaInstitute of Theoretical Physics, Technische Universität Dresden, 01062 Dresden, GermanyRzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, RussiaInstitute of Solid State Physics, Vienna University of Technology, 1040 Vienna, AustriaMercury telluride (HgTe) thin films with a critical thickness of 6.5 nm are predicted to possess a gapless Dirac-like band structure. We report a comprehensive study on gated and optically doped samples by magnetooptical spectroscopy in the THz range. The quasi-classical analysis of the cyclotron resonance allowed the mapping of the band dispersion of Dirac charge carriers in a broad range of electron and hole doping. A smooth transition through the charge neutrality point between Dirac holes and electrons was observed. An additional peak coming from a second type of holes with an almost density-independent mass of around <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>0.04</mn><msub><mi>m</mi><mn>0</mn></msub></mrow></semantics></math></inline-formula> was detected in the hole-doping range and attributed to an asymmetric spin splitting of the Dirac cone. Spectroscopic evidence for disorder-induced band energy fluctuations could not be detected in present cyclotron resonance experiments.https://www.mdpi.com/2079-4991/12/14/2492Dirac fermionstopological insulatorsband structurequantum wellscyclotron resonance
spellingShingle Alexey Shuvaev
Vlad Dziom
Jan Gospodarič
Elena G. Novik
Alena A. Dobretsova
Nikolay N. Mikhailov
Ze Don Kvon
Andrei Pimenov
Band Structure Near the Dirac Point in HgTe Quantum Wells with Critical Thickness
Nanomaterials
Dirac fermions
topological insulators
band structure
quantum wells
cyclotron resonance
title Band Structure Near the Dirac Point in HgTe Quantum Wells with Critical Thickness
title_full Band Structure Near the Dirac Point in HgTe Quantum Wells with Critical Thickness
title_fullStr Band Structure Near the Dirac Point in HgTe Quantum Wells with Critical Thickness
title_full_unstemmed Band Structure Near the Dirac Point in HgTe Quantum Wells with Critical Thickness
title_short Band Structure Near the Dirac Point in HgTe Quantum Wells with Critical Thickness
title_sort band structure near the dirac point in hgte quantum wells with critical thickness
topic Dirac fermions
topological insulators
band structure
quantum wells
cyclotron resonance
url https://www.mdpi.com/2079-4991/12/14/2492
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