Nucleation and growth studies of large-area deposited WS2 on flexible substrates
Transition metal dichalcogenides (TMDCs) such as tungsten disulfide (WS _2 ) are studied for advanced electronic and optical devices because of their unique and versatile electrical, optical and mechanical properties. For the use of TMDC films in next-generation flexible electronics, large-area bott...
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IOP Publishing
2022-01-01
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Online Access: | https://doi.org/10.1088/2053-1591/ac9bd0 |
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author | Thomas Berning Malte Becher Jan-Lucas Wree Julia Jagosz Aleksander Kostka Andreas Ostendorf Anjana Devi Claudia Bock |
author_facet | Thomas Berning Malte Becher Jan-Lucas Wree Julia Jagosz Aleksander Kostka Andreas Ostendorf Anjana Devi Claudia Bock |
author_sort | Thomas Berning |
collection | DOAJ |
description | Transition metal dichalcogenides (TMDCs) such as tungsten disulfide (WS _2 ) are studied for advanced electronic and optical devices because of their unique and versatile electrical, optical and mechanical properties. For the use of TMDC films in next-generation flexible electronics, large-area bottom-up synthesis on flexible substrates needs to be mastered, understood and controlled. In this study, we performed a detailed study on the nucleation and growth of WS _2 layers deposited by metalorganic chemical vapor deposition (MOCVD) on crystalline van-der-Waals material muscovite mica as a model substrate and on the alkali-metal free flexible glass AF 32 ^® eco . The deposition of the WS _2 layers was performed using an all nitrogen-coordinated bis-imido-bis-amido tungsten based precursor in combination with elemental sulfur as the co-reactant. On both substrates, crystalline growth of WS _2 at a moderate growth temperature of 600 °C was verified by Raman spectroscopy and X-ray diffraction (XRD). However, the growth mode and nucleation density differ significantly. On mica, an initially planar growth of WS _2 triangular islands is observed, whereas untreated glass reveals an out-off plane growth. Detailed XRD and Raman analysis show tensile strain in the WS _2 films on both substrates, indicating a strong interaction from CVD grown TMDC films with the underlying carrier material. In order to avoid such substrate-semiconductor interaction, a substrate pre-treatment is required. A plasma pre-treatment prior to the deposition leads to a planar growth even on amorphous glass substrates. |
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spelling | doaj.art-09eea56191dc44eaabbdaa0e904443dc2023-08-09T16:15:53ZengIOP PublishingMaterials Research Express2053-15912022-01-0191111640110.1088/2053-1591/ac9bd0Nucleation and growth studies of large-area deposited WS2 on flexible substratesThomas Berning0https://orcid.org/0000-0002-4342-6437Malte Becher1https://orcid.org/0000-0002-1074-5503Jan-Lucas Wree2https://orcid.org/0000-0002-2275-3236Julia Jagosz3https://orcid.org/0000-0002-5907-7198Aleksander Kostka4https://orcid.org/0000-0002-8306-4709Andreas Ostendorf5https://orcid.org/0000-0002-3601-6392Anjana Devi6https://orcid.org/0000-0003-2142-8105Claudia Bock7https://orcid.org/0000-0003-0933-9556Microsystems Technology, Ruhr University Bochum , 44801 Bochum, GermanyApplied Laser Technologies, Ruhr University Bochum , 44801 Bochum, GermanyInorganic Materials Chemistry, Ruhr University Bochum , 44801 Bochum, GermanyMicrosystems Technology, Ruhr University Bochum , 44801 Bochum, GermanyCenter for Interface Dominated Materials (ZGH), Ruhr University Bochum , 44801 Bochum, GermanyApplied Laser Technologies, Ruhr University Bochum , 44801 Bochum, GermanyInorganic Materials Chemistry, Ruhr University Bochum , 44801 Bochum, GermanyMicrosystems Technology, Ruhr University Bochum , 44801 Bochum, GermanyTransition metal dichalcogenides (TMDCs) such as tungsten disulfide (WS _2 ) are studied for advanced electronic and optical devices because of their unique and versatile electrical, optical and mechanical properties. For the use of TMDC films in next-generation flexible electronics, large-area bottom-up synthesis on flexible substrates needs to be mastered, understood and controlled. In this study, we performed a detailed study on the nucleation and growth of WS _2 layers deposited by metalorganic chemical vapor deposition (MOCVD) on crystalline van-der-Waals material muscovite mica as a model substrate and on the alkali-metal free flexible glass AF 32 ^® eco . The deposition of the WS _2 layers was performed using an all nitrogen-coordinated bis-imido-bis-amido tungsten based precursor in combination with elemental sulfur as the co-reactant. On both substrates, crystalline growth of WS _2 at a moderate growth temperature of 600 °C was verified by Raman spectroscopy and X-ray diffraction (XRD). However, the growth mode and nucleation density differ significantly. On mica, an initially planar growth of WS _2 triangular islands is observed, whereas untreated glass reveals an out-off plane growth. Detailed XRD and Raman analysis show tensile strain in the WS _2 films on both substrates, indicating a strong interaction from CVD grown TMDC films with the underlying carrier material. In order to avoid such substrate-semiconductor interaction, a substrate pre-treatment is required. A plasma pre-treatment prior to the deposition leads to a planar growth even on amorphous glass substrates.https://doi.org/10.1088/2053-1591/ac9bd0WS2nucleationmucvovite micaflexible glassCVDlarge-area growth |
spellingShingle | Thomas Berning Malte Becher Jan-Lucas Wree Julia Jagosz Aleksander Kostka Andreas Ostendorf Anjana Devi Claudia Bock Nucleation and growth studies of large-area deposited WS2 on flexible substrates Materials Research Express WS2 nucleation mucvovite mica flexible glass CVD large-area growth |
title | Nucleation and growth studies of large-area deposited WS2 on flexible substrates |
title_full | Nucleation and growth studies of large-area deposited WS2 on flexible substrates |
title_fullStr | Nucleation and growth studies of large-area deposited WS2 on flexible substrates |
title_full_unstemmed | Nucleation and growth studies of large-area deposited WS2 on flexible substrates |
title_short | Nucleation and growth studies of large-area deposited WS2 on flexible substrates |
title_sort | nucleation and growth studies of large area deposited ws2 on flexible substrates |
topic | WS2 nucleation mucvovite mica flexible glass CVD large-area growth |
url | https://doi.org/10.1088/2053-1591/ac9bd0 |
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