Modified load‐modulation network with two π‐type high‐pass equivalent λ/4 lines for wideband compact GaN MMIC Doherty power amplifier design
Abstract A modified load‐modulation network to design a fully integrated wideband Doherty power amplifier (DPA) from 4.6 to 5.5 GHz is presented in this letter. The modified load‐modulation network uses only two π‐type high‐pass equivalent quarter wavelength transmission lines (QWTLs). Unlike the ex...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2021-08-01
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| Series: | Electronics Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/ell2.12208 |
| _version_ | 1811261086970675200 |
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| author | Rui‐Jia Liu Xiao‐Wei Zhu Jing Xia Yi‐Fan Jiang Peng Chen Chao Yu Chuan Ge |
| author_facet | Rui‐Jia Liu Xiao‐Wei Zhu Jing Xia Yi‐Fan Jiang Peng Chen Chao Yu Chuan Ge |
| author_sort | Rui‐Jia Liu |
| collection | DOAJ |
| description | Abstract A modified load‐modulation network to design a fully integrated wideband Doherty power amplifier (DPA) from 4.6 to 5.5 GHz is presented in this letter. The modified load‐modulation network uses only two π‐type high‐pass equivalent quarter wavelength transmission lines (QWTLs). Unlike the existing methods, the bandwidth of the load‐modulation network composed of two merged π‐type equivalent QWTLs is broadened. Furthermore, a drain bypass capacitor compensation method is proposed to reduce the leakage of RF power after the drain supply inductors are merged. For verification, a wideband monolithic microwave integrated circuit DPA was designed and fabricated using a 0.25‐μm gallium nitride based high‐electron‐mobility transistor process. Measurement results show that a saturated power of 41.6–42.4 dBm, a saturated drain efficiency (DE) of 65.3–72%, and a 6‐dB back‐off DE of 45–55.4% are achieved from 4.6 to 5.5 GHz. Using a 160‐MHz orthogonal frequency‐division multiplexing signal with a peak‐to‐average power ratio of 6.2 dB, the high average efficiency of 49% with an adjacent channel leakage ratio of –47.2 dBc after linearisation was obtained at an average output power of 35 dBm at 4.9 GHz. |
| first_indexed | 2024-04-12T18:57:19Z |
| format | Article |
| id | doaj.art-0a22cdec3132439bbfb71e960db74cc6 |
| institution | Directory Open Access Journal |
| issn | 0013-5194 1350-911X |
| language | English |
| last_indexed | 2024-04-12T18:57:19Z |
| publishDate | 2021-08-01 |
| publisher | Wiley |
| record_format | Article |
| series | Electronics Letters |
| spelling | doaj.art-0a22cdec3132439bbfb71e960db74cc62022-12-22T03:20:16ZengWileyElectronics Letters0013-51941350-911X2021-08-01571663964110.1049/ell2.12208Modified load‐modulation network with two π‐type high‐pass equivalent λ/4 lines for wideband compact GaN MMIC Doherty power amplifier designRui‐Jia Liu0Xiao‐Wei Zhu1Jing Xia2Yi‐Fan Jiang3Peng Chen4Chao Yu5Chuan Ge6School of Information Science and Engineering Southeast University Nanjing ChinaSchool of Information Science and Engineering Southeast University Nanjing ChinaSchool of Computer Science and Communication Engineering Jiangsu University Zhenjiang ChinaMilliway Microelectronics Nanjing ChinaSchool of Information Science and Engineering Southeast University Nanjing ChinaSchool of Information Science and Engineering Southeast University Nanjing ChinaMilliway Microelectronics Nanjing ChinaAbstract A modified load‐modulation network to design a fully integrated wideband Doherty power amplifier (DPA) from 4.6 to 5.5 GHz is presented in this letter. The modified load‐modulation network uses only two π‐type high‐pass equivalent quarter wavelength transmission lines (QWTLs). Unlike the existing methods, the bandwidth of the load‐modulation network composed of two merged π‐type equivalent QWTLs is broadened. Furthermore, a drain bypass capacitor compensation method is proposed to reduce the leakage of RF power after the drain supply inductors are merged. For verification, a wideband monolithic microwave integrated circuit DPA was designed and fabricated using a 0.25‐μm gallium nitride based high‐electron‐mobility transistor process. Measurement results show that a saturated power of 41.6–42.4 dBm, a saturated drain efficiency (DE) of 65.3–72%, and a 6‐dB back‐off DE of 45–55.4% are achieved from 4.6 to 5.5 GHz. Using a 160‐MHz orthogonal frequency‐division multiplexing signal with a peak‐to‐average power ratio of 6.2 dB, the high average efficiency of 49% with an adjacent channel leakage ratio of –47.2 dBc after linearisation was obtained at an average output power of 35 dBm at 4.9 GHz.https://doi.org/10.1049/ell2.12208AmplifiersMicrowave integrated circuitsOther field effect devicesModulation and coding methods |
| spellingShingle | Rui‐Jia Liu Xiao‐Wei Zhu Jing Xia Yi‐Fan Jiang Peng Chen Chao Yu Chuan Ge Modified load‐modulation network with two π‐type high‐pass equivalent λ/4 lines for wideband compact GaN MMIC Doherty power amplifier design Electronics Letters Amplifiers Microwave integrated circuits Other field effect devices Modulation and coding methods |
| title | Modified load‐modulation network with two π‐type high‐pass equivalent λ/4 lines for wideband compact GaN MMIC Doherty power amplifier design |
| title_full | Modified load‐modulation network with two π‐type high‐pass equivalent λ/4 lines for wideband compact GaN MMIC Doherty power amplifier design |
| title_fullStr | Modified load‐modulation network with two π‐type high‐pass equivalent λ/4 lines for wideband compact GaN MMIC Doherty power amplifier design |
| title_full_unstemmed | Modified load‐modulation network with two π‐type high‐pass equivalent λ/4 lines for wideband compact GaN MMIC Doherty power amplifier design |
| title_short | Modified load‐modulation network with two π‐type high‐pass equivalent λ/4 lines for wideband compact GaN MMIC Doherty power amplifier design |
| title_sort | modified load modulation network with two π type high pass equivalent λ 4 lines for wideband compact gan mmic doherty power amplifier design |
| topic | Amplifiers Microwave integrated circuits Other field effect devices Modulation and coding methods |
| url | https://doi.org/10.1049/ell2.12208 |
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