Characterization and modeling of resistive switching phenomena in IGZO devices
This study explores the resistive switching phenomena present in 4 µm2 amorphous Indium–Gallium–Zinc Oxide (IGZO) memristors. Despite being extensively reported in the literature, not many studies detail the mechanisms that dominate conduction on the different states of IGZO-based devices. In this a...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2022-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0098145 |
| _version_ | 1818031741207576576 |
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| author | G. Carvalho M. E. Pereira C. Silva J. Deuermeier A. Kiazadeh V. Tavares |
| author_facet | G. Carvalho M. E. Pereira C. Silva J. Deuermeier A. Kiazadeh V. Tavares |
| author_sort | G. Carvalho |
| collection | DOAJ |
| description | This study explores the resistive switching phenomena present in 4 µm2 amorphous Indium–Gallium–Zinc Oxide (IGZO) memristors. Despite being extensively reported in the literature, not many studies detail the mechanisms that dominate conduction on the different states of IGZO-based devices. In this article, we demonstrate that resistive switching occurs due to the modulation of the Schottky barrier present at the bottom interface of the device. Furthermore, thermionic field emission and field emission regimes are identified as the dominant conduction mechanisms at the high resistive state of the device, while the bulk-limited ohmic conduction is found at the low resistive state. Due to the high complexity associated with creating compact models of resistive switching, a data-driven model is drafted taking systematic steps. |
| first_indexed | 2024-12-10T05:56:17Z |
| format | Article |
| id | doaj.art-0a25de432003488099f7248a38b11e58 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-10T05:56:17Z |
| publishDate | 2022-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-0a25de432003488099f7248a38b11e582022-12-22T01:59:55ZengAIP Publishing LLCAIP Advances2158-32262022-08-01128085017085017-910.1063/5.0098145Characterization and modeling of resistive switching phenomena in IGZO devicesG. Carvalho0M. E. Pereira1C. Silva2J. Deuermeier3A. Kiazadeh4V. Tavares5INESC-TEC and Faculdade de Engenharia da Universidade do Porto, FEUP, 4200-465 Porto, PortugalCENIMAT/i3N, Departamento de Ciências dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Almada, 2825-097 Caparica, PortugalCENIMAT/i3N, Departamento de Ciências dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Almada, 2825-097 Caparica, PortugalCENIMAT/i3N, Departamento de Ciências dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Almada, 2825-097 Caparica, PortugalCENIMAT/i3N, Departamento de Ciências dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Almada, 2825-097 Caparica, PortugalINESC-TEC and Faculdade de Engenharia da Universidade do Porto, FEUP, 4200-465 Porto, PortugalThis study explores the resistive switching phenomena present in 4 µm2 amorphous Indium–Gallium–Zinc Oxide (IGZO) memristors. Despite being extensively reported in the literature, not many studies detail the mechanisms that dominate conduction on the different states of IGZO-based devices. In this article, we demonstrate that resistive switching occurs due to the modulation of the Schottky barrier present at the bottom interface of the device. Furthermore, thermionic field emission and field emission regimes are identified as the dominant conduction mechanisms at the high resistive state of the device, while the bulk-limited ohmic conduction is found at the low resistive state. Due to the high complexity associated with creating compact models of resistive switching, a data-driven model is drafted taking systematic steps.http://dx.doi.org/10.1063/5.0098145 |
| spellingShingle | G. Carvalho M. E. Pereira C. Silva J. Deuermeier A. Kiazadeh V. Tavares Characterization and modeling of resistive switching phenomena in IGZO devices AIP Advances |
| title | Characterization and modeling of resistive switching phenomena in IGZO devices |
| title_full | Characterization and modeling of resistive switching phenomena in IGZO devices |
| title_fullStr | Characterization and modeling of resistive switching phenomena in IGZO devices |
| title_full_unstemmed | Characterization and modeling of resistive switching phenomena in IGZO devices |
| title_short | Characterization and modeling of resistive switching phenomena in IGZO devices |
| title_sort | characterization and modeling of resistive switching phenomena in igzo devices |
| url | http://dx.doi.org/10.1063/5.0098145 |
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