Epitaxial growth by monolayer restricted galvanic displacement

Epitaxial growth by monolayer restricted galvanic displacement

The development of a new method for epitaxial growth of metals in solution by galvanic displacement of layers pre-deposited by underpotential deposition (UPD) was discussed and experimentally illustrated throughout the lecture. Cyclic voltammetry (CV) and scanning tunneling microscopy (STM) are e...

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Bibliographic Details
Main Author: Vasilić Rastko
Format: Article
Language:English
Published: Serbian Chemical Society 2012-01-01
Series:Journal of the Serbian Chemical Society
Subjects:
underpotential deposition
crystal growth
surface morphology
STM
Online Access:http://www.doiserbia.nb.rs/img/doi/0352-5139/2012/0352-51391200013V.pdf

Internet

http://www.doiserbia.nb.rs/img/doi/0352-5139/2012/0352-51391200013V.pdf

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