Epitaxial growth by monolayer restricted galvanic displacement
The development of a new method for epitaxial growth of metals in solution by galvanic displacement of layers pre-deposited by underpotential deposition (UPD) was discussed and experimentally illustrated throughout the lecture. Cyclic voltammetry (CV) and scanning tunneling microscopy (STM) are e...
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| Format: | Article |
| Language: | English |
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Serbian Chemical Society
2012-01-01
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| Series: | Journal of the Serbian Chemical Society |
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| Online Access: | http://www.doiserbia.nb.rs/img/doi/0352-5139/2012/0352-51391200013V.pdf |