Comparative studies of relaxor-ferroelectric Pb0.92La0.08(Zr0.52Ti0.48)O3 thin films deposited by pulsed laser deposition and sol-gel spin coating
In this study, the energy storage properties of relaxor Pb0.92La0.08(Zr0.52Ti0.48)O3 (PLZT) thin films grown on Pt/ Si substrates using pulsed laser deposition (PLD) and sol-gel methods were investigated. The PLZT thin films deposited by PLD possessed a columnar growth microstructure and mixed orie...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Vietnam Ministry of Science and Technology
2022-09-01
|
| Series: | Vietnam Journal of Science, Technology and Engineering |
| Subjects: | |
| Online Access: | https://vietnamscience.vjst.vn/index.php/vjste/article/view/1027 |
| _version_ | 1797937806128971776 |
|---|---|
| author | Thi Ha Dang Thi Doan Tran Duc Minh Nguyen Van Truong Do Ngoc Hung Vu |
| author_facet | Thi Ha Dang Thi Doan Tran Duc Minh Nguyen Van Truong Do Ngoc Hung Vu |
| author_sort | Thi Ha Dang |
| collection | DOAJ |
| description |
In this study, the energy storage properties of relaxor Pb0.92La0.08(Zr0.52Ti0.48)O3 (PLZT) thin films grown on Pt/ Si substrates using pulsed laser deposition (PLD) and sol-gel methods were investigated. The PLZT thin films deposited by PLD possessed a columnar growth microstructure and mixed orientations of (100) and (110) while a dense microstructure and preferred orientation of (100) were achieved by sol-gel deposition. Although the electric breakdown strength (EBD) of the sol-gel-deposited PLZT thin films (EBD=2200 kV/cm) was slightly higher than that of the films deposited using PLD (EBD=2100 kV/cm), the PLD-deposited PLZT thin films had a larger recoverable energy storage density (Ureco) and energy storage efficiency (η), which can be explained by its slimmer polarization loop, higher maximum polarization, and lower remanent polarization. At corresponding E BD values, the Ureco and η values were 33.2 J/cm3 and 67.5% for the PLD-deposited films and 27.5 J/cm3 and 62.2% for the sol-gel-deposited films. Although the sol-gel-deposited PLZT thin films had lower energy storage performance, the sol-gel method remains a promising method for the fabrication of thin films for dielectric energy storage applications due to its unique advantages of low fabrication cost, simple preparation process, and easy control of chemical composition.
|
| first_indexed | 2024-04-10T18:49:58Z |
| format | Article |
| id | doaj.art-0a64b71aefbc4564af837c50be604ea5 |
| institution | Directory Open Access Journal |
| issn | 2525-2461 2615-9937 |
| language | English |
| last_indexed | 2024-04-10T18:49:58Z |
| publishDate | 2022-09-01 |
| publisher | Vietnam Ministry of Science and Technology |
| record_format | Article |
| series | Vietnam Journal of Science, Technology and Engineering |
| spelling | doaj.art-0a64b71aefbc4564af837c50be604ea52023-02-01T08:10:47ZengVietnam Ministry of Science and TechnologyVietnam Journal of Science, Technology and Engineering2525-24612615-99372022-09-0164310.31276/VJSTE.64(3).38-43Comparative studies of relaxor-ferroelectric Pb0.92La0.08(Zr0.52Ti0.48)O3 thin films deposited by pulsed laser deposition and sol-gel spin coatingThi Ha Dang0Thi Doan Tran1Duc Minh Nguyen2Van Truong Do3Ngoc Hung Vu4International Training Institute for Materials Science, Hanoi University of Science and Technology, Vietnam; School of Mechanical Engineering, Hanoi University of Science and Technology, Vietnam; Vietnam National University of Forestry, VietnamInternational Training Institute for Materials Science, Hanoi University of Science and Technology, VietnamInternational Training Institute for Materials Science, Hanoi University of Science and Technology, Vietnam; MESA+ Institute for Nanotechnology, University of Twente, NetherlandsSchool of Mechanical Engineering, Hanoi University of Science and Technology, VietnamInternational Training Institute for Materials Science, Hanoi University of Science and Technology, Vietnam In this study, the energy storage properties of relaxor Pb0.92La0.08(Zr0.52Ti0.48)O3 (PLZT) thin films grown on Pt/ Si substrates using pulsed laser deposition (PLD) and sol-gel methods were investigated. The PLZT thin films deposited by PLD possessed a columnar growth microstructure and mixed orientations of (100) and (110) while a dense microstructure and preferred orientation of (100) were achieved by sol-gel deposition. Although the electric breakdown strength (EBD) of the sol-gel-deposited PLZT thin films (EBD=2200 kV/cm) was slightly higher than that of the films deposited using PLD (EBD=2100 kV/cm), the PLD-deposited PLZT thin films had a larger recoverable energy storage density (Ureco) and energy storage efficiency (η), which can be explained by its slimmer polarization loop, higher maximum polarization, and lower remanent polarization. At corresponding E BD values, the Ureco and η values were 33.2 J/cm3 and 67.5% for the PLD-deposited films and 27.5 J/cm3 and 62.2% for the sol-gel-deposited films. Although the sol-gel-deposited PLZT thin films had lower energy storage performance, the sol-gel method remains a promising method for the fabrication of thin films for dielectric energy storage applications due to its unique advantages of low fabrication cost, simple preparation process, and easy control of chemical composition. https://vietnamscience.vjst.vn/index.php/vjste/article/view/1027energy storage performancepulsed laser depositionrelaxor ferroelectricssol-gelthin film capacitors |
| spellingShingle | Thi Ha Dang Thi Doan Tran Duc Minh Nguyen Van Truong Do Ngoc Hung Vu Comparative studies of relaxor-ferroelectric Pb0.92La0.08(Zr0.52Ti0.48)O3 thin films deposited by pulsed laser deposition and sol-gel spin coating Vietnam Journal of Science, Technology and Engineering energy storage performance pulsed laser deposition relaxor ferroelectrics sol-gel thin film capacitors |
| title | Comparative studies of relaxor-ferroelectric Pb0.92La0.08(Zr0.52Ti0.48)O3 thin films deposited by pulsed laser deposition and sol-gel spin coating |
| title_full | Comparative studies of relaxor-ferroelectric Pb0.92La0.08(Zr0.52Ti0.48)O3 thin films deposited by pulsed laser deposition and sol-gel spin coating |
| title_fullStr | Comparative studies of relaxor-ferroelectric Pb0.92La0.08(Zr0.52Ti0.48)O3 thin films deposited by pulsed laser deposition and sol-gel spin coating |
| title_full_unstemmed | Comparative studies of relaxor-ferroelectric Pb0.92La0.08(Zr0.52Ti0.48)O3 thin films deposited by pulsed laser deposition and sol-gel spin coating |
| title_short | Comparative studies of relaxor-ferroelectric Pb0.92La0.08(Zr0.52Ti0.48)O3 thin films deposited by pulsed laser deposition and sol-gel spin coating |
| title_sort | comparative studies of relaxor ferroelectric pb0 92la0 08 zr0 52ti0 48 o3 thin films deposited by pulsed laser deposition and sol gel spin coating |
| topic | energy storage performance pulsed laser deposition relaxor ferroelectrics sol-gel thin film capacitors |
| url | https://vietnamscience.vjst.vn/index.php/vjste/article/view/1027 |
| work_keys_str_mv | AT thihadang comparativestudiesofrelaxorferroelectricpb092la008zr052ti048o3thinfilmsdepositedbypulsedlaserdepositionandsolgelspincoating AT thidoantran comparativestudiesofrelaxorferroelectricpb092la008zr052ti048o3thinfilmsdepositedbypulsedlaserdepositionandsolgelspincoating AT ducminhnguyen comparativestudiesofrelaxorferroelectricpb092la008zr052ti048o3thinfilmsdepositedbypulsedlaserdepositionandsolgelspincoating AT vantruongdo comparativestudiesofrelaxorferroelectricpb092la008zr052ti048o3thinfilmsdepositedbypulsedlaserdepositionandsolgelspincoating AT ngochungvu comparativestudiesofrelaxorferroelectricpb092la008zr052ti048o3thinfilmsdepositedbypulsedlaserdepositionandsolgelspincoating |