Ground-State Structure of Quaternary Alloys (SiC)<sub>1−<i>x</i></sub> (AlN)<i><sub>x</sub></i> and (SiC)<sub>1−<i>x</i></sub> (GaN)<i><sub>x</sub></i>

Ground-State Structure of Quaternary Alloys (SiC)<sub>1−<i>x</i></sub> (AlN)<i><sub>x</sub></i> and (SiC)<sub>1−<i>x</i></sub> (GaN)<i><sub>x</sub></i>

Despite III-nitride and silicon carbide being the materials of choice for a wide range of applications, theoretical studies on their quaternary alloys are limited. Here, we report a systematic computational study on the electronic structural properties of (SiC)<i><sub>x</sub></i...

Full description

Bibliographic Details
Main Authors: Abdelkader Menad, Mohamed Ferhat, Ali Zaoui
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Micromachines
Subjects:
quaternary alloys
(SiC)<sub>x</sub>(AlN)<sub>1−x</sub>
(SiC)<sub>x</sub>(GaN)<sub>1−x</sub>
DFT
evolutionary algorithms
Online Access:https://www.mdpi.com/2072-666X/14/2/250

Similar Items

Similar Items