The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures
We report in this paper on the study of surface acoustic wave (SAW) resonators based on an AlN/titanium alloy (TC4) structure. The AlN/TC4 structure with different thicknesses of AlN films was simulated, and the acoustic propagating modes were discussed. Based on the simulation results, interdigital...
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MDPI AG
2016-04-01
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Online Access: | http://www.mdpi.com/1424-8220/16/4/526 |
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author | Lin Shu Bin Peng Chuan Li Dongdong Gong Zhengbing Yang Xingzhao Liu Wanli Zhang |
author_facet | Lin Shu Bin Peng Chuan Li Dongdong Gong Zhengbing Yang Xingzhao Liu Wanli Zhang |
author_sort | Lin Shu |
collection | DOAJ |
description | We report in this paper on the study of surface acoustic wave (SAW) resonators based on an AlN/titanium alloy (TC4) structure. The AlN/TC4 structure with different thicknesses of AlN films was simulated, and the acoustic propagating modes were discussed. Based on the simulation results, interdigital transducers with a periodic length of 24 μm were patterned by lift-off photolithography techniques on the AlN films/TC4 structure, while the AlN film thickness was in the range 1.5–3.5 μm. The device performances in terms of quality factor (Q-factor) and electromechanical coupling coefficient (k2) were determined from the measure S11 parameters. The Q-factor and k2 were strongly dependent not only on the normalized AlN film thickness but also on the full-width at half-maximum (FWHM) of AlN (002) peak. The dispersion curve of the SAW phase velocity was analyzed, and the experimental results showed a good agreement with simulations. The temperature behaviors of the devices were also presented and discussed. The prepared SAW resonators based on AlN/TC4 structure have potential applications in integrated micromechanical sensing systems. |
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language | English |
last_indexed | 2024-04-13T07:28:42Z |
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spelling | doaj.art-0ab3d2461a8647978f594d8658ec74f12022-12-22T02:56:25ZengMDPI AGSensors1424-82202016-04-0116452610.3390/s16040526s16040526The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal StructuresLin Shu0Bin Peng1Chuan Li2Dongdong Gong3Zhengbing Yang4Xingzhao Liu5Wanli Zhang6State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaChina Gas Turbine Establishment, Jiangyou 621703, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaWe report in this paper on the study of surface acoustic wave (SAW) resonators based on an AlN/titanium alloy (TC4) structure. The AlN/TC4 structure with different thicknesses of AlN films was simulated, and the acoustic propagating modes were discussed. Based on the simulation results, interdigital transducers with a periodic length of 24 μm were patterned by lift-off photolithography techniques on the AlN films/TC4 structure, while the AlN film thickness was in the range 1.5–3.5 μm. The device performances in terms of quality factor (Q-factor) and electromechanical coupling coefficient (k2) were determined from the measure S11 parameters. The Q-factor and k2 were strongly dependent not only on the normalized AlN film thickness but also on the full-width at half-maximum (FWHM) of AlN (002) peak. The dispersion curve of the SAW phase velocity was analyzed, and the experimental results showed a good agreement with simulations. The temperature behaviors of the devices were also presented and discussed. The prepared SAW resonators based on AlN/TC4 structure have potential applications in integrated micromechanical sensing systems.http://www.mdpi.com/1424-8220/16/4/526AlN filmTC4surface acoustic wavelayered structuresimulation |
spellingShingle | Lin Shu Bin Peng Chuan Li Dongdong Gong Zhengbing Yang Xingzhao Liu Wanli Zhang The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures Sensors AlN film TC4 surface acoustic wave layered structure simulation |
title | The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures |
title_full | The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures |
title_fullStr | The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures |
title_full_unstemmed | The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures |
title_short | The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures |
title_sort | characterization of surface acoustic wave devices based on aln metal structures |
topic | AlN film TC4 surface acoustic wave layered structure simulation |
url | http://www.mdpi.com/1424-8220/16/4/526 |
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