A Hybrid Phototransistor Neuromorphic Synapse
In this paper, a synaptic transistor based on the indium zinc oxide (IZO)-hafnium oxide (HfO<sub>2</sub>) thin film structure was demonstrated. Blue light pulses (470 nm) were used as the presynaptic stimulus, the IZO channel was used as the postsynaptic membrane, and the HfO<sub>2...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8482246/ |
| _version_ | 1828891803754954752 |
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| author | Yu Liu Wen Huang Xiawa Wang Renrong Liang Jing Wang Bin Yu Tian-Ling Ren Jun Xu |
| author_facet | Yu Liu Wen Huang Xiawa Wang Renrong Liang Jing Wang Bin Yu Tian-Ling Ren Jun Xu |
| author_sort | Yu Liu |
| collection | DOAJ |
| description | In this paper, a synaptic transistor based on the indium zinc oxide (IZO)-hafnium oxide (HfO<sub>2</sub>) thin film structure was demonstrated. Blue light pulses (470 nm) were used as the presynaptic stimulus, the IZO channel was used as the postsynaptic membrane, and the HfO<sub>2</sub> electrolyte film was regarded as the synaptic cleft. The synaptic transistor exhibited the behavior of paired-pulse facilitation. With different light power densities, the channel current of the transistor can be regulated to different levels, corresponding to different synaptic weights. In addition, the transistor showed the brain's memory behaviors including the short-term memory and the transition from the short to the long term memory. The synaptic behaviors of the transistor can be explained by the trapping and releasing processes of the photo-generated carriers. |
| first_indexed | 2024-12-13T13:23:35Z |
| format | Article |
| id | doaj.art-0abd21947bbf4b95bde7202a8447ebc8 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-13T13:23:35Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-0abd21947bbf4b95bde7202a8447ebc82022-12-21T23:44:20ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-017131710.1109/JEDS.2018.28743348482246A Hybrid Phototransistor Neuromorphic SynapseYu Liu0https://orcid.org/0000-0002-5863-8715Wen Huang1Xiawa Wang2Renrong Liang3Jing Wang4Bin Yu5Tian-Ling Ren6https://orcid.org/0000-0002-7330-0544Jun Xu7Institute of Microelectronics, Tsinghua University, Beijing, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaInstitute of Microelectronics, Tsinghua University, Beijing, ChinaInstitute of Microelectronics, Tsinghua University, Beijing, ChinaInstitute of Microelectronics, Tsinghua University, Beijing, ChinaCollege of Nanoscale Science and Engineering, State University of New York, Albany, NY, USAInstitute of Microelectronics, Tsinghua University, Beijing, ChinaInstitute of Microelectronics, Tsinghua University, Beijing, ChinaIn this paper, a synaptic transistor based on the indium zinc oxide (IZO)-hafnium oxide (HfO<sub>2</sub>) thin film structure was demonstrated. Blue light pulses (470 nm) were used as the presynaptic stimulus, the IZO channel was used as the postsynaptic membrane, and the HfO<sub>2</sub> electrolyte film was regarded as the synaptic cleft. The synaptic transistor exhibited the behavior of paired-pulse facilitation. With different light power densities, the channel current of the transistor can be regulated to different levels, corresponding to different synaptic weights. In addition, the transistor showed the brain's memory behaviors including the short-term memory and the transition from the short to the long term memory. The synaptic behaviors of the transistor can be explained by the trapping and releasing processes of the photo-generated carriers.https://ieeexplore.ieee.org/document/8482246/Artificial synapselight-stimulatedIZOHfO₂ |
| spellingShingle | Yu Liu Wen Huang Xiawa Wang Renrong Liang Jing Wang Bin Yu Tian-Ling Ren Jun Xu A Hybrid Phototransistor Neuromorphic Synapse IEEE Journal of the Electron Devices Society Artificial synapse light-stimulated IZO HfO₂ |
| title | A Hybrid Phototransistor Neuromorphic Synapse |
| title_full | A Hybrid Phototransistor Neuromorphic Synapse |
| title_fullStr | A Hybrid Phototransistor Neuromorphic Synapse |
| title_full_unstemmed | A Hybrid Phototransistor Neuromorphic Synapse |
| title_short | A Hybrid Phototransistor Neuromorphic Synapse |
| title_sort | hybrid phototransistor neuromorphic synapse |
| topic | Artificial synapse light-stimulated IZO HfO₂ |
| url | https://ieeexplore.ieee.org/document/8482246/ |
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