Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications
In this paper, the diode characteristics of our newly proposed super-steep subthreshold slope “PN-body tied (PNBT) silicon-on-insulator field-effect transistor” are presented, and compared with conventional diodes. We report that the device possesses super-steep characteristics...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8333692/ |
| _version_ | 1818927499912937472 |
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| author | Takayuki Mori Jiro Ida Shun Momose Kenji Itoh Koichiro Ishibashi Yasuo Arai |
| author_facet | Takayuki Mori Jiro Ida Shun Momose Kenji Itoh Koichiro Ishibashi Yasuo Arai |
| author_sort | Takayuki Mori |
| collection | DOAJ |
| description | In this paper, the diode characteristics of our newly proposed super-steep subthreshold slope “PN-body tied (PNBT) silicon-on-insulator field-effect transistor” are presented, and compared with conventional diodes. We report that the device possesses super-steep characteristics, low leakage current, and sharp turn-on characteristics, even in the ultralow voltage range (50 mV). These indicate that the PNBT diode can potentially be used in high-efficiency rectification for energy harvesting, particularly in situations where there is ultralow input power. In addition, the hysteresis characteristics and the slight shift of the voltage at zero current are confirmed as specific characteristics of PNBT diodes. |
| first_indexed | 2024-12-20T03:14:00Z |
| format | Article |
| id | doaj.art-0abd78cb6bb54078aaa3a4b84bbea7e6 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-20T03:14:00Z |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-0abd78cb6bb54078aaa3a4b84bbea7e62022-12-21T19:55:24ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-01656557010.1109/JEDS.2018.28243448333692Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting ApplicationsTakayuki Mori0https://orcid.org/0000-0002-9199-0868Jiro Ida1Shun Momose2Kenji Itoh3https://orcid.org/0000-0002-8206-1872Koichiro Ishibashi4https://orcid.org/0000-0001-6328-5371Yasuo Arai5https://orcid.org/0000-0002-1454-2287Division of Electrical Engineering, Kanazawa Institute of Technology, Ishikawa, JapanDivision of Electrical Engineering, Kanazawa Institute of Technology, Ishikawa, JapanDivision of Electrical Engineering, Kanazawa Institute of Technology, Ishikawa, JapanDivision of Electrical Engineering, Kanazawa Institute of Technology, Ishikawa, JapanGraduate School of Informatics and Engineering, The University of Electro-Communications, Tokyo, JapanHigh Energy Accelerator Research Organization, KEK, Tsukuba, JapanIn this paper, the diode characteristics of our newly proposed super-steep subthreshold slope “PN-body tied (PNBT) silicon-on-insulator field-effect transistor” are presented, and compared with conventional diodes. We report that the device possesses super-steep characteristics, low leakage current, and sharp turn-on characteristics, even in the ultralow voltage range (50 mV). These indicate that the PNBT diode can potentially be used in high-efficiency rectification for energy harvesting, particularly in situations where there is ultralow input power. In addition, the hysteresis characteristics and the slight shift of the voltage at zero current are confirmed as specific characteristics of PNBT diodes.https://ieeexplore.ieee.org/document/8333692/Energy harvestingSOI MOSFETsteep subthreshold slope |
| spellingShingle | Takayuki Mori Jiro Ida Shun Momose Kenji Itoh Koichiro Ishibashi Yasuo Arai Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications IEEE Journal of the Electron Devices Society Energy harvesting SOI MOSFET steep subthreshold slope |
| title | Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications |
| title_full | Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications |
| title_fullStr | Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications |
| title_full_unstemmed | Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications |
| title_short | Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications |
| title_sort | diode characteristics of a super steep subthreshold slope pn body tied soi fet for energy harvesting applications |
| topic | Energy harvesting SOI MOSFET steep subthreshold slope |
| url | https://ieeexplore.ieee.org/document/8333692/ |
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