Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications

Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications

In this paper, the diode characteristics of our newly proposed super-steep subthreshold slope “PN-body tied (PNBT) silicon-on-insulator field-effect transistor” are presented, and compared with conventional diodes. We report that the device possesses super-steep characteristics...

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Bibliographic Details
Main Authors: Takayuki Mori, Jiro Ida, Shun Momose, Kenji Itoh, Koichiro Ishibashi, Yasuo Arai
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Energy harvesting
SOI MOSFET
steep subthreshold slope
Online Access:https://ieeexplore.ieee.org/document/8333692/

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