Annealing temperature induced improved crystallinity of YSZ thin film

Annealing temperature induced improved crystallinity of YSZ thin film

Six YSZ thin films (YSZTFs) were prepared at varied annealing temperature (380 °C to 600 °C) by radio frequency magnetron sputtering method. Glancing angle x-ray diffraction (GAXRD) pattern revealed the polycrystalline nature of all films with crystallite size in the range of 9 to 15 nm. Sample anne...

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Bibliographic Details
Main Authors: N A Rusli, R Muhammad, S K Ghoshal, H Nur, N Nayan
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:Materials Research Express
Subjects:
YSZ thin film
annealing temperature
microstrain
morphology
surface roughness
structural
Online Access:https://doi.org/10.1088/2053-1591/ab9039

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