Optical back-action in silicon nanowire resonators: bolometric versus radiation pressure effects

We study optical back-action effects associated with confined electromagnetic modes in silicon nanowire resonators interacting with a laser beam used for interferometric read-out of the nanowire vibrations. Our analysis describes the resonance frequency shift produced in the nanowires by two differe...

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Main Authors: E Gil-Santos, D Ramos, V Pini, J Llorens, M Fernández-Regúlez, M Calleja, J Tamayo, A San Paulo
Format: Article
Language:English
Published: IOP Publishing 2013-01-01
Series:New Journal of Physics
Online Access:https://doi.org/10.1088/1367-2630/15/3/035001
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author E Gil-Santos
D Ramos
V Pini
J Llorens
M Fernández-Regúlez
M Calleja
J Tamayo
A San Paulo
author_facet E Gil-Santos
D Ramos
V Pini
J Llorens
M Fernández-Regúlez
M Calleja
J Tamayo
A San Paulo
author_sort E Gil-Santos
collection DOAJ
description We study optical back-action effects associated with confined electromagnetic modes in silicon nanowire resonators interacting with a laser beam used for interferometric read-out of the nanowire vibrations. Our analysis describes the resonance frequency shift produced in the nanowires by two different mechanisms: the temperature dependence of the nanowire's Young's modulus and the effect of radiation pressure. We find different regimes in which each effect dominates depending on the nanowire morphology and dimensions, resulting in either positive or negative frequency shifts. Our results also show that in some cases bolometric and radiation pressure effects can have opposite contributions so that their overall effect is greatly reduced. We conclude that Si nanowire resonators can be engineered for harnessing back-action effects for either optimizing frequency stability or exploiting dynamic phenomena such as parametric amplification.
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spelling doaj.art-0afa0617b1564e58b2de641f4946e14f2023-08-08T11:08:05ZengIOP PublishingNew Journal of Physics1367-26302013-01-0115303500110.1088/1367-2630/15/3/035001Optical back-action in silicon nanowire resonators: bolometric versus radiation pressure effectsE Gil-Santos0D Ramos1V Pini2J Llorens3M Fernández-Regúlez4M Calleja5J Tamayo6A San Paulo7Instituto de Microelectrónica de Madrid, CSIC , Isaac Newton 8 (PTM), Tres Cantos, E-28760 Madrid, SpainSchool of Engineering and Applied Sciences, Harvard University , Cambridge, MA 02138, USAInstituto de Microelectrónica de Madrid, CSIC , Isaac Newton 8 (PTM), Tres Cantos, E-28760 Madrid, SpainInstituto de Microelectrónica de Madrid, CSIC , Isaac Newton 8 (PTM), Tres Cantos, E-28760 Madrid, SpainInstituto de Microelectrónica de Barcelona, CSIC , Campus UAB, Bellaterra E-08193, Barcelona, SpainInstituto de Microelectrónica de Madrid, CSIC , Isaac Newton 8 (PTM), Tres Cantos, E-28760 Madrid, SpainInstituto de Microelectrónica de Madrid, CSIC , Isaac Newton 8 (PTM), Tres Cantos, E-28760 Madrid, SpainInstituto de Microelectrónica de Madrid, CSIC , Isaac Newton 8 (PTM), Tres Cantos, E-28760 Madrid, Spain; Instituto de Microelectrónica de Barcelona, CSIC , Campus UAB, Bellaterra E-08193, Barcelona, SpainWe study optical back-action effects associated with confined electromagnetic modes in silicon nanowire resonators interacting with a laser beam used for interferometric read-out of the nanowire vibrations. Our analysis describes the resonance frequency shift produced in the nanowires by two different mechanisms: the temperature dependence of the nanowire's Young's modulus and the effect of radiation pressure. We find different regimes in which each effect dominates depending on the nanowire morphology and dimensions, resulting in either positive or negative frequency shifts. Our results also show that in some cases bolometric and radiation pressure effects can have opposite contributions so that their overall effect is greatly reduced. We conclude that Si nanowire resonators can be engineered for harnessing back-action effects for either optimizing frequency stability or exploiting dynamic phenomena such as parametric amplification.https://doi.org/10.1088/1367-2630/15/3/035001
spellingShingle E Gil-Santos
D Ramos
V Pini
J Llorens
M Fernández-Regúlez
M Calleja
J Tamayo
A San Paulo
Optical back-action in silicon nanowire resonators: bolometric versus radiation pressure effects
New Journal of Physics
title Optical back-action in silicon nanowire resonators: bolometric versus radiation pressure effects
title_full Optical back-action in silicon nanowire resonators: bolometric versus radiation pressure effects
title_fullStr Optical back-action in silicon nanowire resonators: bolometric versus radiation pressure effects
title_full_unstemmed Optical back-action in silicon nanowire resonators: bolometric versus radiation pressure effects
title_short Optical back-action in silicon nanowire resonators: bolometric versus radiation pressure effects
title_sort optical back action in silicon nanowire resonators bolometric versus radiation pressure effects
url https://doi.org/10.1088/1367-2630/15/3/035001
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