High Performance Amorphous In0.5Ga0.5O Thin‐Film Transistor Embedded with Nanocrystalline In2O3 Dots for Flexible Display Application

High Performance Amorphous In0.5Ga0.5O Thin‐Film Transistor Embedded with Nanocrystalline In2O3 Dots for Flexible Display Application

Abstract High‐performance, coplanar amorphous In0.5Ga0.5O (a‐IGO) thin film transistor (TFT) on a polyimide (PI) substrate deposited by spray pyrolysis (SP) is reported. The SP a‐IGO film deposited at 370 °C has less than 8% nanocrystalline‐In2O3 dots and a mass density of 6.6 g cm−3. The a‐IGO TFT...

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Bibliographic Details
Main Authors: Md. Hasnat Rabbi, Arqum Ali, Chanju Park, Jin Jang
Format: Article
Language:English
Published: Wiley-VCH 2023-10-01
Series:Advanced Electronic Materials
Subjects:
amorphous oxide semiconductors
flexible electronics
flexible substrates
high stability
polyimide
spray pyrolysis
Online Access:https://doi.org/10.1002/aelm.202300169

Internet

https://doi.org/10.1002/aelm.202300169

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