Fully integrated topological electronics
Abstract Topological insulators (TIs) have attracted significant attention in photonics and acoustics due to their unique physical properties and promising applications. Electronics has recently emerged as an exciting arena to study various topological phenomena because of its advantages in building...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
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Nature Portfolio
2022-08-01
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Series: | Scientific Reports |
Online Access: | https://doi.org/10.1038/s41598-022-17010-8 |
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author | Yuqi Liu Weidong Cao Weijian Chen Hua Wang Lan Yang Xuan Zhang |
author_facet | Yuqi Liu Weidong Cao Weijian Chen Hua Wang Lan Yang Xuan Zhang |
author_sort | Yuqi Liu |
collection | DOAJ |
description | Abstract Topological insulators (TIs) have attracted significant attention in photonics and acoustics due to their unique physical properties and promising applications. Electronics has recently emerged as an exciting arena to study various topological phenomena because of its advantages in building complex topological structures. Here, we explore TIs on an integrated circuit (IC) platform with a standard complementary metal-oxide-semiconductor technology. Based on the Su–Schrieffer–Heeger model, we design a fully integrated topological circuit chain using multiple capacitively-coupled inductor–capacitor resonators. We perform comprehensive post-layout simulations on its physical layout to observe and evaluate the salient topological features. Our results demonstrate the existence of the topological edge state and the remarkable robustness of the edge state against various defects. Our work shows the feasibility and promise of studying TIs with IC technology, paving the way for future explorations of large-scale topological electronics on the scalable IC platform. |
first_indexed | 2024-04-13T19:59:51Z |
format | Article |
id | doaj.art-0b338ff8cba04cc48b9e29a8904fccdf |
institution | Directory Open Access Journal |
issn | 2045-2322 |
language | English |
last_indexed | 2024-04-13T19:59:51Z |
publishDate | 2022-08-01 |
publisher | Nature Portfolio |
record_format | Article |
series | Scientific Reports |
spelling | doaj.art-0b338ff8cba04cc48b9e29a8904fccdf2022-12-22T02:32:14ZengNature PortfolioScientific Reports2045-23222022-08-0112111010.1038/s41598-022-17010-8Fully integrated topological electronicsYuqi Liu0Weidong Cao1Weijian Chen2Hua Wang3Lan Yang4Xuan Zhang5Department of Electrical and Systems Engineering, Washington UniversityDepartment of Electrical and Systems Engineering, Washington UniversityDepartment of Electrical and Systems Engineering, Washington UniversitySchool of Electrical and Computer Engineering, Georgia Institute of TechnologyDepartment of Electrical and Systems Engineering, Washington UniversityDepartment of Electrical and Systems Engineering, Washington UniversityAbstract Topological insulators (TIs) have attracted significant attention in photonics and acoustics due to their unique physical properties and promising applications. Electronics has recently emerged as an exciting arena to study various topological phenomena because of its advantages in building complex topological structures. Here, we explore TIs on an integrated circuit (IC) platform with a standard complementary metal-oxide-semiconductor technology. Based on the Su–Schrieffer–Heeger model, we design a fully integrated topological circuit chain using multiple capacitively-coupled inductor–capacitor resonators. We perform comprehensive post-layout simulations on its physical layout to observe and evaluate the salient topological features. Our results demonstrate the existence of the topological edge state and the remarkable robustness of the edge state against various defects. Our work shows the feasibility and promise of studying TIs with IC technology, paving the way for future explorations of large-scale topological electronics on the scalable IC platform.https://doi.org/10.1038/s41598-022-17010-8 |
spellingShingle | Yuqi Liu Weidong Cao Weijian Chen Hua Wang Lan Yang Xuan Zhang Fully integrated topological electronics Scientific Reports |
title | Fully integrated topological electronics |
title_full | Fully integrated topological electronics |
title_fullStr | Fully integrated topological electronics |
title_full_unstemmed | Fully integrated topological electronics |
title_short | Fully integrated topological electronics |
title_sort | fully integrated topological electronics |
url | https://doi.org/10.1038/s41598-022-17010-8 |
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