Fully integrated topological electronics

Abstract Topological insulators (TIs) have attracted significant attention in photonics and acoustics due to their unique physical properties and promising applications. Electronics has recently emerged as an exciting arena to study various topological phenomena because of its advantages in building...

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Main Authors: Yuqi Liu, Weidong Cao, Weijian Chen, Hua Wang, Lan Yang, Xuan Zhang
Format: Article
Language:English
Published: Nature Portfolio 2022-08-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-022-17010-8
_version_ 1811345226104569856
author Yuqi Liu
Weidong Cao
Weijian Chen
Hua Wang
Lan Yang
Xuan Zhang
author_facet Yuqi Liu
Weidong Cao
Weijian Chen
Hua Wang
Lan Yang
Xuan Zhang
author_sort Yuqi Liu
collection DOAJ
description Abstract Topological insulators (TIs) have attracted significant attention in photonics and acoustics due to their unique physical properties and promising applications. Electronics has recently emerged as an exciting arena to study various topological phenomena because of its advantages in building complex topological structures. Here, we explore TIs on an integrated circuit (IC) platform with a standard complementary metal-oxide-semiconductor technology. Based on the Su–Schrieffer–Heeger model, we design a fully integrated topological circuit chain using multiple capacitively-coupled inductor–capacitor resonators. We perform comprehensive post-layout simulations on its physical layout to observe and evaluate the salient topological features. Our results demonstrate the existence of the topological edge state and the remarkable robustness of the edge state against various defects. Our work shows the feasibility and promise of studying TIs with IC technology, paving the way for future explorations of large-scale topological electronics on the scalable IC platform.
first_indexed 2024-04-13T19:59:51Z
format Article
id doaj.art-0b338ff8cba04cc48b9e29a8904fccdf
institution Directory Open Access Journal
issn 2045-2322
language English
last_indexed 2024-04-13T19:59:51Z
publishDate 2022-08-01
publisher Nature Portfolio
record_format Article
series Scientific Reports
spelling doaj.art-0b338ff8cba04cc48b9e29a8904fccdf2022-12-22T02:32:14ZengNature PortfolioScientific Reports2045-23222022-08-0112111010.1038/s41598-022-17010-8Fully integrated topological electronicsYuqi Liu0Weidong Cao1Weijian Chen2Hua Wang3Lan Yang4Xuan Zhang5Department of Electrical and Systems Engineering, Washington UniversityDepartment of Electrical and Systems Engineering, Washington UniversityDepartment of Electrical and Systems Engineering, Washington UniversitySchool of Electrical and Computer Engineering, Georgia Institute of TechnologyDepartment of Electrical and Systems Engineering, Washington UniversityDepartment of Electrical and Systems Engineering, Washington UniversityAbstract Topological insulators (TIs) have attracted significant attention in photonics and acoustics due to their unique physical properties and promising applications. Electronics has recently emerged as an exciting arena to study various topological phenomena because of its advantages in building complex topological structures. Here, we explore TIs on an integrated circuit (IC) platform with a standard complementary metal-oxide-semiconductor technology. Based on the Su–Schrieffer–Heeger model, we design a fully integrated topological circuit chain using multiple capacitively-coupled inductor–capacitor resonators. We perform comprehensive post-layout simulations on its physical layout to observe and evaluate the salient topological features. Our results demonstrate the existence of the topological edge state and the remarkable robustness of the edge state against various defects. Our work shows the feasibility and promise of studying TIs with IC technology, paving the way for future explorations of large-scale topological electronics on the scalable IC platform.https://doi.org/10.1038/s41598-022-17010-8
spellingShingle Yuqi Liu
Weidong Cao
Weijian Chen
Hua Wang
Lan Yang
Xuan Zhang
Fully integrated topological electronics
Scientific Reports
title Fully integrated topological electronics
title_full Fully integrated topological electronics
title_fullStr Fully integrated topological electronics
title_full_unstemmed Fully integrated topological electronics
title_short Fully integrated topological electronics
title_sort fully integrated topological electronics
url https://doi.org/10.1038/s41598-022-17010-8
work_keys_str_mv AT yuqiliu fullyintegratedtopologicalelectronics
AT weidongcao fullyintegratedtopologicalelectronics
AT weijianchen fullyintegratedtopologicalelectronics
AT huawang fullyintegratedtopologicalelectronics
AT lanyang fullyintegratedtopologicalelectronics
AT xuanzhang fullyintegratedtopologicalelectronics