Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations
The paper presents a precise and efficient model of Double-Side Cooled (DSC) SiC MOSFET, which incorporates the dynamics of both electrical and thermal variables. It offers a suitable computational complexity for simulating transients in complex power converters. The objective is to define a model t...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10192428/ |
| _version_ | 1827868483391586304 |
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| author | Pierpaolo Dini Sergio Saponara Sajib Chakraborty Farzad Hosseinabadi Omar Hegazy |
| author_facet | Pierpaolo Dini Sergio Saponara Sajib Chakraborty Farzad Hosseinabadi Omar Hegazy |
| author_sort | Pierpaolo Dini |
| collection | DOAJ |
| description | The paper presents a precise and efficient model of Double-Side Cooled (DSC) SiC MOSFET, which incorporates the dynamics of both electrical and thermal variables. It offers a suitable computational complexity for simulating transients in complex power converters. The objective is to define a model that enables multi-scale time simulations and facilitates rapid power converter design in system-level tools such as Simulink. Additionally, the model aims to achieve simulation accuracy comparable to device-level models for the next generation of SiC MOSFETs. The paper demonstrates the complete test bench measurement procedure for the device. This procedure is essential for experimentally extrapolating the intrinsic characteristics and developing a model-reduction approach based on electro-thermal modeling. The approach strikes a balance between computational complexity and level of detail. The proposed model has been seamlessly integrated into Simulink to simulate a 3-phase inverter for several grid cycles at the grid frequency. To evaluate the model’s validity, the predicted inverter performance is compared with experimental measurements. These simulations require significantly less time compared to those based on LTspice models. |
| first_indexed | 2024-03-12T15:32:06Z |
| format | Article |
| id | doaj.art-0b359fc5b2cc47f1b949cb1b54f2c353 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-03-12T15:32:06Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-0b359fc5b2cc47f1b949cb1b54f2c3532023-08-09T23:00:48ZengIEEEIEEE Access2169-35362023-01-0111791207914310.1109/ACCESS.2023.329852610192428Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter SimulationsPierpaolo Dini0https://orcid.org/0000-0002-9425-7354Sergio Saponara1https://orcid.org/0000-0001-6724-4219Sajib Chakraborty2https://orcid.org/0000-0002-9727-7844Farzad Hosseinabadi3Omar Hegazy4https://orcid.org/0000-0002-8650-7341Department of Information Engineering, University of Pisa, Pisa, ItalyDepartment of Information Engineering, University of Pisa, Pisa, ItalyETEC Department, MOBI-EPOWERS Research Group, Vrije Universiteit Brussel (VUB), Brussel, BelgiumETEC Department, MOBI-EPOWERS Research Group, Vrije Universiteit Brussel (VUB), Brussel, BelgiumETEC Department, MOBI-EPOWERS Research Group, Vrije Universiteit Brussel (VUB), Brussel, BelgiumThe paper presents a precise and efficient model of Double-Side Cooled (DSC) SiC MOSFET, which incorporates the dynamics of both electrical and thermal variables. It offers a suitable computational complexity for simulating transients in complex power converters. The objective is to define a model that enables multi-scale time simulations and facilitates rapid power converter design in system-level tools such as Simulink. Additionally, the model aims to achieve simulation accuracy comparable to device-level models for the next generation of SiC MOSFETs. The paper demonstrates the complete test bench measurement procedure for the device. This procedure is essential for experimentally extrapolating the intrinsic characteristics and developing a model-reduction approach based on electro-thermal modeling. The approach strikes a balance between computational complexity and level of detail. The proposed model has been seamlessly integrated into Simulink to simulate a 3-phase inverter for several grid cycles at the grid frequency. To evaluate the model’s validity, the predicted inverter performance is compared with experimental measurements. These simulations require significantly less time compared to those based on LTspice models.https://ieeexplore.ieee.org/document/10192428/Model-based designmulti-scalesimulationpower measurespower converterssilicon carbide (SiC) |
| spellingShingle | Pierpaolo Dini Sergio Saponara Sajib Chakraborty Farzad Hosseinabadi Omar Hegazy Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations IEEE Access Model-based design multi-scale simulation power measures power converters silicon carbide (SiC) |
| title | Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations |
| title_full | Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations |
| title_fullStr | Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations |
| title_full_unstemmed | Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations |
| title_short | Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations |
| title_sort | experimental characterization and electro thermal modeling of double side cooled sic mosfets for accurate and rapid power converter simulations |
| topic | Model-based design multi-scale simulation power measures power converters silicon carbide (SiC) |
| url | https://ieeexplore.ieee.org/document/10192428/ |
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