Top-emitting 940-nm thin-film VCSELs transferred onto aluminum heatsinks
Abstract Thin-film vertical cavity surface emitting lasers (VCSELs) mounted onto heatsinks open up the way toward low-power consumption and high-power operation, enabling them to be widely used for energy saving high-speed optical data communication and three-dimensional sensor applications. There a...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-01-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-021-04625-6 |
| _version_ | 1798026548956102656 |
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| author | Sunghyun Moon Yeojun Yun Minhyung Lee Donghwan Kim Wonjin Choi Ji-Yong Park Jaejin Lee |
| author_facet | Sunghyun Moon Yeojun Yun Minhyung Lee Donghwan Kim Wonjin Choi Ji-Yong Park Jaejin Lee |
| author_sort | Sunghyun Moon |
| collection | DOAJ |
| description | Abstract Thin-film vertical cavity surface emitting lasers (VCSELs) mounted onto heatsinks open up the way toward low-power consumption and high-power operation, enabling them to be widely used for energy saving high-speed optical data communication and three-dimensional sensor applications. There are two conventional VCSEL polarity structures: p-on-n and n-on-p polarity. The former is more preferably used owing to the reduced series resistance of n-type bottom distributed Bragg reflection (DBR) as well as the lower defect densities of n-type GaAs substrates. In this study, the p-on-n structures of thin-film VCSELs, including an etch stop layer and a highly n-doped GaAs ohmic layer, were epitaxially grown in upright order by using low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The p-on-n structures of thin-film VCSELs were transferred onto an aluminum heatsink via a double-transfer technique, allowing the top-emitting thin-film VCSELs to keep the p-on-n polarity with the removal of the GaAs substrate. The threshold current (I th ) and voltage (V th ) of the fabricated top-emitting thin-film VCSELs were 1 mA and 2.8 V, respectively. The optical power was 7.7 mW at a rollover point of 16.1 mA. |
| first_indexed | 2024-04-11T18:37:08Z |
| format | Article |
| id | doaj.art-0b74d6439e2148de8172875d4855bca4 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-11T18:37:08Z |
| publishDate | 2022-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-0b74d6439e2148de8172875d4855bca42022-12-22T04:09:13ZengNature PortfolioScientific Reports2045-23222022-01-011211710.1038/s41598-021-04625-6Top-emitting 940-nm thin-film VCSELs transferred onto aluminum heatsinksSunghyun Moon0Yeojun Yun1Minhyung Lee2Donghwan Kim3Wonjin Choi4Ji-Yong Park5Jaejin Lee6Department of Electrical and Computer Engineering, Ajou UniversityDepartment of Electrical and Computer Engineering, Ajou UniversityDepartment of Electrical and Computer Engineering, Ajou UniversityRayIR Corporation, LTDRayIR Corporation, LTDDepartment of Physics and Department of Energy Systems Research, Ajou UniversityDepartment of Electrical and Computer Engineering, Ajou UniversityAbstract Thin-film vertical cavity surface emitting lasers (VCSELs) mounted onto heatsinks open up the way toward low-power consumption and high-power operation, enabling them to be widely used for energy saving high-speed optical data communication and three-dimensional sensor applications. There are two conventional VCSEL polarity structures: p-on-n and n-on-p polarity. The former is more preferably used owing to the reduced series resistance of n-type bottom distributed Bragg reflection (DBR) as well as the lower defect densities of n-type GaAs substrates. In this study, the p-on-n structures of thin-film VCSELs, including an etch stop layer and a highly n-doped GaAs ohmic layer, were epitaxially grown in upright order by using low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The p-on-n structures of thin-film VCSELs were transferred onto an aluminum heatsink via a double-transfer technique, allowing the top-emitting thin-film VCSELs to keep the p-on-n polarity with the removal of the GaAs substrate. The threshold current (I th ) and voltage (V th ) of the fabricated top-emitting thin-film VCSELs were 1 mA and 2.8 V, respectively. The optical power was 7.7 mW at a rollover point of 16.1 mA.https://doi.org/10.1038/s41598-021-04625-6 |
| spellingShingle | Sunghyun Moon Yeojun Yun Minhyung Lee Donghwan Kim Wonjin Choi Ji-Yong Park Jaejin Lee Top-emitting 940-nm thin-film VCSELs transferred onto aluminum heatsinks Scientific Reports |
| title | Top-emitting 940-nm thin-film VCSELs transferred onto aluminum heatsinks |
| title_full | Top-emitting 940-nm thin-film VCSELs transferred onto aluminum heatsinks |
| title_fullStr | Top-emitting 940-nm thin-film VCSELs transferred onto aluminum heatsinks |
| title_full_unstemmed | Top-emitting 940-nm thin-film VCSELs transferred onto aluminum heatsinks |
| title_short | Top-emitting 940-nm thin-film VCSELs transferred onto aluminum heatsinks |
| title_sort | top emitting 940 nm thin film vcsels transferred onto aluminum heatsinks |
| url | https://doi.org/10.1038/s41598-021-04625-6 |
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