A Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation
In this paper, we propose an energy-efficient, reliable, hybrid, 10-transistor/2-Double-Barrier-Magnetic-Tunnel-Junction (10T2DMTJ) non-volatile (NV) ternary content-addressable memory (TCAM) with sub-nanosecond search operation. Our cell design relies on low-energy-demanding MTJs organized in a low...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/10045679/ |
| _version_ | 1797894914269249536 |
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| author | Esteban Garzon Leonid Yavits Giovanni Finocchio Mario Carpentieri Adam Teman Marco Lanuzza |
| author_facet | Esteban Garzon Leonid Yavits Giovanni Finocchio Mario Carpentieri Adam Teman Marco Lanuzza |
| author_sort | Esteban Garzon |
| collection | DOAJ |
| description | In this paper, we propose an energy-efficient, reliable, hybrid, 10-transistor/2-Double-Barrier-Magnetic-Tunnel-Junction (10T2DMTJ) non-volatile (NV) ternary content-addressable memory (TCAM) with sub-nanosecond search operation. Our cell design relies on low-energy-demanding MTJs organized in a low-complexity voltage-divider-based circuit along with a simple dynamic logic CMOS matching network, which improves the search reliability. The proposed NV-TCAM was designed in 28 nm FDSOI process and evaluated under exhaustive Monte Carlo simulations. When compared to the best previous proposed NV-TCAMs, our solution achieves lower search error rate (3.8 <inline-formula> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula>) and lower write and search energy (–73% and–79%, respectively), while also exhibiting smaller area footprint (–74%). Such benefits are achieved at the expense of reduced search speed. |
| first_indexed | 2024-04-10T07:18:06Z |
| format | Article |
| id | doaj.art-0b8c07d74019444da96994f8508cc6e0 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-04-10T07:18:06Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-0b8c07d74019444da96994f8508cc6e02023-02-25T00:02:01ZengIEEEIEEE Access2169-35362023-01-0111168121681910.1109/ACCESS.2023.324598110045679A Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search OperationEsteban Garzon0https://orcid.org/0000-0002-5862-2246Leonid Yavits1https://orcid.org/0000-0001-5248-3997Giovanni Finocchio2https://orcid.org/0000-0002-1043-3876Mario Carpentieri3https://orcid.org/0000-0001-5165-5873Adam Teman4https://orcid.org/0000-0002-8233-4711Marco Lanuzza5https://orcid.org/0000-0002-6480-9218Department of Computer Engineering, Modeling, Electronics and Systems, University of Calabria (UNICAL), Rende, ItalyEmerging Nanoscaled Integrated Circuits and Systems (EnICS) Labs, Faculty of Engineering, Bar-Ilan University, Ramat Gan, IsraelDepartment of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences, University of Messina, Messina, ItalyDepartment of Electrical and Information Engineering, Politecnico di Bari, Bari, ItalyEmerging Nanoscaled Integrated Circuits and Systems (EnICS) Labs, Faculty of Engineering, Bar-Ilan University, Ramat Gan, IsraelDepartment of Computer Engineering, Modeling, Electronics and Systems, University of Calabria (UNICAL), Rende, ItalyIn this paper, we propose an energy-efficient, reliable, hybrid, 10-transistor/2-Double-Barrier-Magnetic-Tunnel-Junction (10T2DMTJ) non-volatile (NV) ternary content-addressable memory (TCAM) with sub-nanosecond search operation. Our cell design relies on low-energy-demanding MTJs organized in a low-complexity voltage-divider-based circuit along with a simple dynamic logic CMOS matching network, which improves the search reliability. The proposed NV-TCAM was designed in 28 nm FDSOI process and evaluated under exhaustive Monte Carlo simulations. When compared to the best previous proposed NV-TCAMs, our solution achieves lower search error rate (3.8 <inline-formula> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula>) and lower write and search energy (–73% and–79%, respectively), while also exhibiting smaller area footprint (–74%). Such benefits are achieved at the expense of reduced search speed.https://ieeexplore.ieee.org/document/10045679/Double-barrier MTJnon-volatile TCAM (NV-TCAM)energy-efficiencylow-power |
| spellingShingle | Esteban Garzon Leonid Yavits Giovanni Finocchio Mario Carpentieri Adam Teman Marco Lanuzza A Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation IEEE Access Double-barrier MTJ non-volatile TCAM (NV-TCAM) energy-efficiency low-power |
| title | A Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation |
| title_full | A Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation |
| title_fullStr | A Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation |
| title_full_unstemmed | A Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation |
| title_short | A Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation |
| title_sort | low energy dmtj based ternary content addressable memory with reliable sub nanosecond search operation |
| topic | Double-barrier MTJ non-volatile TCAM (NV-TCAM) energy-efficiency low-power |
| url | https://ieeexplore.ieee.org/document/10045679/ |
| work_keys_str_mv | AT estebangarzon alowenergydmtjbasedternarycontentaddressablememorywithreliablesubnanosecondsearchoperation AT leonidyavits alowenergydmtjbasedternarycontentaddressablememorywithreliablesubnanosecondsearchoperation AT giovannifinocchio alowenergydmtjbasedternarycontentaddressablememorywithreliablesubnanosecondsearchoperation AT mariocarpentieri alowenergydmtjbasedternarycontentaddressablememorywithreliablesubnanosecondsearchoperation AT adamteman alowenergydmtjbasedternarycontentaddressablememorywithreliablesubnanosecondsearchoperation AT marcolanuzza alowenergydmtjbasedternarycontentaddressablememorywithreliablesubnanosecondsearchoperation AT estebangarzon lowenergydmtjbasedternarycontentaddressablememorywithreliablesubnanosecondsearchoperation AT leonidyavits lowenergydmtjbasedternarycontentaddressablememorywithreliablesubnanosecondsearchoperation AT giovannifinocchio lowenergydmtjbasedternarycontentaddressablememorywithreliablesubnanosecondsearchoperation AT mariocarpentieri lowenergydmtjbasedternarycontentaddressablememorywithreliablesubnanosecondsearchoperation AT adamteman lowenergydmtjbasedternarycontentaddressablememorywithreliablesubnanosecondsearchoperation AT marcolanuzza lowenergydmtjbasedternarycontentaddressablememorywithreliablesubnanosecondsearchoperation |