A Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation

A Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation

In this paper, we propose an energy-efficient, reliable, hybrid, 10-transistor/2-Double-Barrier-Magnetic-Tunnel-Junction (10T2DMTJ) non-volatile (NV) ternary content-addressable memory (TCAM) with sub-nanosecond search operation. Our cell design relies on low-energy-demanding MTJs organized in a low...

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Bibliographic Details
Main Authors: Esteban Garzon, Leonid Yavits, Giovanni Finocchio, Mario Carpentieri, Adam Teman, Marco Lanuzza
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Double-barrier MTJ
non-volatile TCAM (NV-TCAM)
energy-efficiency
low-power
Online Access:https://ieeexplore.ieee.org/document/10045679/

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