Homo-Junction Bottom-Gate Amorphous In–Ga–Zn–O TFTs With Metal-Induced Source/Drain Regions
A fabrication process for homo-junction bottom-gate (HJBG) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed, in which the a-IGZO section as source/drain (S/D) regions is induced into a low resistance state by coating a thin metal Al film and then performing a thermal annealing...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8494735/ |
| _version_ | 1818619517257908224 |
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| author | Yang Shao Xiaoliang Zhou Huan Yang Baozhu Chang Ting Liang Yi Wang Shengdong Zhang |
| author_facet | Yang Shao Xiaoliang Zhou Huan Yang Baozhu Chang Ting Liang Yi Wang Shengdong Zhang |
| author_sort | Yang Shao |
| collection | DOAJ |
| description | A fabrication process for homo-junction bottom-gate (HJBG) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed, in which the a-IGZO section as source/drain (S/D) regions is induced into a low resistance state by coating a thin metal Al film and then performing a thermal annealing in oxygen, with the channel region protected from back etching by depositing and patterning a protective layer. The experimental results show that with a 5 nm Al film and annealing at 200 °C, the sheet resistance of the S/D a-IGZO is reduced to 803 Ω/EI, and keeps stable during a subsequent thermal treatment. In addition, the thin Al<sub>2</sub>O<sub>3</sub> film generated by the annealing contributes to an improved thermal stability and ambient atmosphere immunity for the fabricated HJBG TFTs. |
| first_indexed | 2024-12-16T17:38:44Z |
| format | Article |
| id | doaj.art-0bb113f3ab684c0ba5cc297530f57835 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-16T17:38:44Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-0bb113f3ab684c0ba5cc297530f578352022-12-21T22:22:40ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-017525610.1109/JEDS.2018.28766188494735Homo-Junction Bottom-Gate Amorphous In–Ga–Zn–O TFTs With Metal-Induced Source/Drain RegionsYang Shao0https://orcid.org/0000-0002-1631-9206Xiaoliang Zhou1https://orcid.org/0000-0002-5430-1306Huan Yang2Baozhu Chang3Ting Liang4Yi Wang5Shengdong Zhang6https://orcid.org/0000-0002-1815-8661School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, ChinaInstitute of Microelectronics, Peking University, Beijing, ChinaSchool of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, ChinaSchool of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, ChinaSchool of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, ChinaInstitute of Microelectronics, Peking University, Beijing, ChinaSchool of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, ChinaA fabrication process for homo-junction bottom-gate (HJBG) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed, in which the a-IGZO section as source/drain (S/D) regions is induced into a low resistance state by coating a thin metal Al film and then performing a thermal annealing in oxygen, with the channel region protected from back etching by depositing and patterning a protective layer. The experimental results show that with a 5 nm Al film and annealing at 200 °C, the sheet resistance of the S/D a-IGZO is reduced to 803 Ω/EI, and keeps stable during a subsequent thermal treatment. In addition, the thin Al<sub>2</sub>O<sub>3</sub> film generated by the annealing contributes to an improved thermal stability and ambient atmosphere immunity for the fabricated HJBG TFTs.https://ieeexplore.ieee.org/document/8494735/Amorphous indium–gallium–zinc oxidethin-film transistorshomo-junctionaluminum reaction |
| spellingShingle | Yang Shao Xiaoliang Zhou Huan Yang Baozhu Chang Ting Liang Yi Wang Shengdong Zhang Homo-Junction Bottom-Gate Amorphous In–Ga–Zn–O TFTs With Metal-Induced Source/Drain Regions IEEE Journal of the Electron Devices Society Amorphous indium–gallium–zinc oxide thin-film transistors homo-junction aluminum reaction |
| title | Homo-Junction Bottom-Gate Amorphous In–Ga–Zn–O TFTs With Metal-Induced Source/Drain Regions |
| title_full | Homo-Junction Bottom-Gate Amorphous In–Ga–Zn–O TFTs With Metal-Induced Source/Drain Regions |
| title_fullStr | Homo-Junction Bottom-Gate Amorphous In–Ga–Zn–O TFTs With Metal-Induced Source/Drain Regions |
| title_full_unstemmed | Homo-Junction Bottom-Gate Amorphous In–Ga–Zn–O TFTs With Metal-Induced Source/Drain Regions |
| title_short | Homo-Junction Bottom-Gate Amorphous In–Ga–Zn–O TFTs With Metal-Induced Source/Drain Regions |
| title_sort | homo junction bottom gate amorphous in x2013 ga x2013 zn x2013 o tfts with metal induced source drain regions |
| topic | Amorphous indium–gallium–zinc oxide thin-film transistors homo-junction aluminum reaction |
| url | https://ieeexplore.ieee.org/document/8494735/ |
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