Vertically Arranged Zinc Oxide Nanorods as Antireflection Layer for Crystalline Silicon Solar Cell: A Simulation Study of Photovoltaic Properties
This paper describes the unique antireflection (AR) layer of vertically arranged ZnO nanorods (NRs) on crystalline silicon (c-Si) solar cells and studies the charge transport and photovoltaic properties by simulation. The vertically arranged ZnO NRs were deposited on ZnO-seeded c-Si wafers by a simp...
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MDPI AG
2020-09-01
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| author | Deb Kumar Shah Devendra KC M. Shaheer Akhtar Chong Yeal Kim O-Bong Yang |
| author_facet | Deb Kumar Shah Devendra KC M. Shaheer Akhtar Chong Yeal Kim O-Bong Yang |
| author_sort | Deb Kumar Shah |
| collection | DOAJ |
| description | This paper describes the unique antireflection (AR) layer of vertically arranged ZnO nanorods (NRs) on crystalline silicon (c-Si) solar cells and studies the charge transport and photovoltaic properties by simulation. The vertically arranged ZnO NRs were deposited on ZnO-seeded c-Si wafers by a simple low-temperature solution process. The lengths of the ZnO NRs were optimized by changing the reaction times. Highly dense and vertically arranged ZnO NRs were obtained over the c-Si wafer when the reaction time was 5 h. The deposited ZnO NRs on the c-Si wafers exhibited the lowest reflectance of ~7.5% at 838 nm, having a reasonable average reflectance of ~9.5% in the whole wavelength range (400–1000 nm). Using PC1D software, the charge transport and photovoltaic properties of c-Si solar cells were explored by considering the lengths of the ZnO NRs and the reflectance values. The 1.1 μm length of the ZnO NRs and a minimum average reflectance of 9.5% appeared to be the optimum values for achieving the highest power conversion efficiency of 14.88%. The simulation study for the vertically arranged ZnO NRs AR layers clearly reflects that the low-temperature deposited ZnO NRs on c-Si solar cells could pose a greater prospect in the manufacturing of low-cost c-Si solar cells. |
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| language | English |
| last_indexed | 2024-03-10T16:38:25Z |
| publishDate | 2020-09-01 |
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| spelling | doaj.art-0c1bc08f708e467e8df290ee819e797b2023-11-20T12:10:30ZengMDPI AGApplied Sciences2076-34172020-09-011017606210.3390/app10176062Vertically Arranged Zinc Oxide Nanorods as Antireflection Layer for Crystalline Silicon Solar Cell: A Simulation Study of Photovoltaic PropertiesDeb Kumar Shah0Devendra KC1M. Shaheer Akhtar2Chong Yeal Kim3O-Bong Yang4School of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, KoreaDepartment of Science, Lebesby Oppvekstsenter School, 9740 Lebessby, NorwaySchool of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, KoreaNew and Renewable Energy Materials Development Center (NewREC), Jeonbuk National University, Jeonbuk 56332, KoreaSchool of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, KoreaThis paper describes the unique antireflection (AR) layer of vertically arranged ZnO nanorods (NRs) on crystalline silicon (c-Si) solar cells and studies the charge transport and photovoltaic properties by simulation. The vertically arranged ZnO NRs were deposited on ZnO-seeded c-Si wafers by a simple low-temperature solution process. The lengths of the ZnO NRs were optimized by changing the reaction times. Highly dense and vertically arranged ZnO NRs were obtained over the c-Si wafer when the reaction time was 5 h. The deposited ZnO NRs on the c-Si wafers exhibited the lowest reflectance of ~7.5% at 838 nm, having a reasonable average reflectance of ~9.5% in the whole wavelength range (400–1000 nm). Using PC1D software, the charge transport and photovoltaic properties of c-Si solar cells were explored by considering the lengths of the ZnO NRs and the reflectance values. The 1.1 μm length of the ZnO NRs and a minimum average reflectance of 9.5% appeared to be the optimum values for achieving the highest power conversion efficiency of 14.88%. The simulation study for the vertically arranged ZnO NRs AR layers clearly reflects that the low-temperature deposited ZnO NRs on c-Si solar cells could pose a greater prospect in the manufacturing of low-cost c-Si solar cells.https://www.mdpi.com/2076-3417/10/17/6062zinc oxidethin filmsilicon solar cellsantireflection layerpower conversion efficiencyPC1D simulation |
| spellingShingle | Deb Kumar Shah Devendra KC M. Shaheer Akhtar Chong Yeal Kim O-Bong Yang Vertically Arranged Zinc Oxide Nanorods as Antireflection Layer for Crystalline Silicon Solar Cell: A Simulation Study of Photovoltaic Properties Applied Sciences zinc oxide thin film silicon solar cells antireflection layer power conversion efficiency PC1D simulation |
| title | Vertically Arranged Zinc Oxide Nanorods as Antireflection Layer for Crystalline Silicon Solar Cell: A Simulation Study of Photovoltaic Properties |
| title_full | Vertically Arranged Zinc Oxide Nanorods as Antireflection Layer for Crystalline Silicon Solar Cell: A Simulation Study of Photovoltaic Properties |
| title_fullStr | Vertically Arranged Zinc Oxide Nanorods as Antireflection Layer for Crystalline Silicon Solar Cell: A Simulation Study of Photovoltaic Properties |
| title_full_unstemmed | Vertically Arranged Zinc Oxide Nanorods as Antireflection Layer for Crystalline Silicon Solar Cell: A Simulation Study of Photovoltaic Properties |
| title_short | Vertically Arranged Zinc Oxide Nanorods as Antireflection Layer for Crystalline Silicon Solar Cell: A Simulation Study of Photovoltaic Properties |
| title_sort | vertically arranged zinc oxide nanorods as antireflection layer for crystalline silicon solar cell a simulation study of photovoltaic properties |
| topic | zinc oxide thin film silicon solar cells antireflection layer power conversion efficiency PC1D simulation |
| url | https://www.mdpi.com/2076-3417/10/17/6062 |
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