Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions
Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high operation speed at low power arising from the ease o...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Beilstein-Institut
2020-01-01
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| Series: | Beilstein Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://doi.org/10.3762/bjnano.11.9 |
| _version_ | 1828861658845413376 |
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| author | Botond Sánta Dániel Molnár Patrick Haiber Agnes Gubicza Edit Szilágyi Zsolt Zolnai András Halbritter Miklós Csontos |
| author_facet | Botond Sánta Dániel Molnár Patrick Haiber Agnes Gubicza Edit Szilágyi Zsolt Zolnai András Halbritter Miklós Csontos |
| author_sort | Botond Sánta |
| collection | DOAJ |
| description | Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high operation speed at low power arising from the ease of the electric-field-driven redistribution of only a small amount of highly mobile ionic species upon resistive switching. We investigate the memristive behavior of a so-far less explored representative of this class, the Ag/AgI material system in a point contact arrangement established by the conducting PtIr tip of a scanning probe microscope. We demonstrate stable resistive switching duty cycles and investigate the dynamical aspects of non-volatile operation in detail. The high-speed switching capabilities are explored by a custom-designed microwave setup that enables time-resolved studies of subsequent set and reset transitions upon biasing the Ag/AgI/PtIr nanojunctions with sub-nanosecond voltage pulses. Our results demonstrate the potential of Ag-based filamentary memristive nanodevices to serve as the hardware elements in high-speed neuromorphic circuits. |
| first_indexed | 2024-12-13T03:07:33Z |
| format | Article |
| id | doaj.art-0c34efc4831b4a308e698a06dc25726a |
| institution | Directory Open Access Journal |
| issn | 2190-4286 |
| language | English |
| last_indexed | 2024-12-13T03:07:33Z |
| publishDate | 2020-01-01 |
| publisher | Beilstein-Institut |
| record_format | Article |
| series | Beilstein Journal of Nanotechnology |
| spelling | doaj.art-0c34efc4831b4a308e698a06dc25726a2022-12-22T00:01:41ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862020-01-011119210010.3762/bjnano.11.92190-4286-11-9Nanosecond resistive switching in Ag/AgI/PtIr nanojunctionsBotond Sánta0Dániel Molnár1Patrick Haiber2Agnes Gubicza3Edit Szilágyi4Zsolt Zolnai5András Halbritter6Miklós Csontos7Department of Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, HungaryDepartment of Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, HungaryDepartment of Physics, University of Konstanz, Universitätstrasse 10, D-78464 Konstanz, GermanyDepartment of Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, HungaryWigner Research Centre for Physics, Hungarian Academy of Sciences, Konkoly-Thege Miklós út 29-33, H-1121 Budapest, HungaryCentre for Energy Research, Institute of Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly-Thege Miklós út 29-33, H-1121 Budapest, HungaryDepartment of Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, HungaryDepartment of Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, HungaryNanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high operation speed at low power arising from the ease of the electric-field-driven redistribution of only a small amount of highly mobile ionic species upon resistive switching. We investigate the memristive behavior of a so-far less explored representative of this class, the Ag/AgI material system in a point contact arrangement established by the conducting PtIr tip of a scanning probe microscope. We demonstrate stable resistive switching duty cycles and investigate the dynamical aspects of non-volatile operation in detail. The high-speed switching capabilities are explored by a custom-designed microwave setup that enables time-resolved studies of subsequent set and reset transitions upon biasing the Ag/AgI/PtIr nanojunctions with sub-nanosecond voltage pulses. Our results demonstrate the potential of Ag-based filamentary memristive nanodevices to serve as the hardware elements in high-speed neuromorphic circuits.https://doi.org/10.3762/bjnano.11.9memristornanojunctionnanosecond operationresistive switchingsilver iodide (agi) |
| spellingShingle | Botond Sánta Dániel Molnár Patrick Haiber Agnes Gubicza Edit Szilágyi Zsolt Zolnai András Halbritter Miklós Csontos Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions Beilstein Journal of Nanotechnology memristor nanojunction nanosecond operation resistive switching silver iodide (agi) |
| title | Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions |
| title_full | Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions |
| title_fullStr | Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions |
| title_full_unstemmed | Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions |
| title_short | Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions |
| title_sort | nanosecond resistive switching in ag agi ptir nanojunctions |
| topic | memristor nanojunction nanosecond operation resistive switching silver iodide (agi) |
| url | https://doi.org/10.3762/bjnano.11.9 |
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