Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high operation speed at low power arising from the ease o...

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Bibliographic Details
Main Authors: Botond Sánta, Dániel Molnár, Patrick Haiber, Agnes Gubicza, Edit Szilágyi, Zsolt Zolnai, András Halbritter, Miklós Csontos
Format: Article
Language:English
Published: Beilstein-Institut 2020-01-01
Series:Beilstein Journal of Nanotechnology
Subjects:
memristor
nanojunction
nanosecond operation
resistive switching
silver iodide (agi)
Online Access:https://doi.org/10.3762/bjnano.11.9

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