Study of indium nitride and indium oxynitride band gaps
This work shows the study of the optical band gap of indium oxynitride (InNO) and indium nitride (InN) deposited by magnetron reactive sputtering. InNO shows multi-functionality in electrical and photonic applications, transparency in visible range, wide band gap, high resistivity and low leakage cu...
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| Format: | Article |
| Language: | English |
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Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)
2013-05-01
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| Series: | Materials Research |
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| Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392013000400022&tlng=en |
| _version_ | 1818973676215730176 |
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| author | M. Sparvoli R. D. Mansano J. F. D. Chubaci |
| author_facet | M. Sparvoli R. D. Mansano J. F. D. Chubaci |
| author_sort | M. Sparvoli |
| collection | DOAJ |
| description | This work shows the study of the optical band gap of indium oxynitride (InNO) and indium nitride (InN) deposited by magnetron reactive sputtering. InNO shows multi-functionality in electrical and photonic applications, transparency in visible range, wide band gap, high resistivity and low leakage current. The deposition processes were performed in a magnetron sputtering system using a four-inches pure In (99.999%) target and nitrogen and oxygen as plasma gases. The pressure was kept constant at 1.33 Pa and the RF power (13.56 MHz) constant at 250 W. Three-inches diameter silicon wafer with 370 micrometer thickness and resistivity in the range of 10 ohm-centimeter was used as substrate. The thin films were analyzed by UV-Vis-NIR reflectance, photoluminescence (PL) and Hall Effect. The band gap was obtained from Tauc analysis of the reflectance spectra and photoluminescence. The band gap was evaluated for both films: for InNO the value was 2.48 eV and for InN, 1.52 eV. The relative quantities obtained from RBS spectra analysis in InNO sample are 48% O, 12% N, 40% In and in InN sample are 8% O, 65% N, 27% In. |
| first_indexed | 2024-12-20T15:27:57Z |
| format | Article |
| id | doaj.art-0c7e499bc20342d4a4e8a218953b9595 |
| institution | Directory Open Access Journal |
| issn | 1516-1439 |
| language | English |
| last_indexed | 2024-12-20T15:27:57Z |
| publishDate | 2013-05-01 |
| publisher | Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) |
| record_format | Article |
| series | Materials Research |
| spelling | doaj.art-0c7e499bc20342d4a4e8a218953b95952022-12-21T19:35:44ZengAssociação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)Materials Research1516-14392013-05-0116485085210.1590/S1516-14392013005000063Study of indium nitride and indium oxynitride band gapsM. Sparvoli0R. D. Mansano1J. F. D. Chubaci2Universidade de São PauloUniversidade de São PauloUniversidade de São PauloThis work shows the study of the optical band gap of indium oxynitride (InNO) and indium nitride (InN) deposited by magnetron reactive sputtering. InNO shows multi-functionality in electrical and photonic applications, transparency in visible range, wide band gap, high resistivity and low leakage current. The deposition processes were performed in a magnetron sputtering system using a four-inches pure In (99.999%) target and nitrogen and oxygen as plasma gases. The pressure was kept constant at 1.33 Pa and the RF power (13.56 MHz) constant at 250 W. Three-inches diameter silicon wafer with 370 micrometer thickness and resistivity in the range of 10 ohm-centimeter was used as substrate. The thin films were analyzed by UV-Vis-NIR reflectance, photoluminescence (PL) and Hall Effect. The band gap was obtained from Tauc analysis of the reflectance spectra and photoluminescence. The band gap was evaluated for both films: for InNO the value was 2.48 eV and for InN, 1.52 eV. The relative quantities obtained from RBS spectra analysis in InNO sample are 48% O, 12% N, 40% In and in InN sample are 8% O, 65% N, 27% In.http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392013000400022&tlng=enindium oxynitridesputteringband gapsemiconductor |
| spellingShingle | M. Sparvoli R. D. Mansano J. F. D. Chubaci Study of indium nitride and indium oxynitride band gaps Materials Research indium oxynitride sputtering band gap semiconductor |
| title | Study of indium nitride and indium oxynitride band gaps |
| title_full | Study of indium nitride and indium oxynitride band gaps |
| title_fullStr | Study of indium nitride and indium oxynitride band gaps |
| title_full_unstemmed | Study of indium nitride and indium oxynitride band gaps |
| title_short | Study of indium nitride and indium oxynitride band gaps |
| title_sort | study of indium nitride and indium oxynitride band gaps |
| topic | indium oxynitride sputtering band gap semiconductor |
| url | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392013000400022&tlng=en |
| work_keys_str_mv | AT msparvoli studyofindiumnitrideandindiumoxynitridebandgaps AT rdmansano studyofindiumnitrideandindiumoxynitridebandgaps AT jfdchubaci studyofindiumnitrideandindiumoxynitridebandgaps |