ELECTROPHYSICAL PROPERTIES OF CONTACTS WITH IRSI – SI SCHOTTKY BARRIER
Holes in N2 atmosphere were detected on the IrSi surface, obtained by magnetron spraying, the same defects are observed in IrSi, obtained by method of thermal evaporation in vacuum. The decrease in defects size by annealing in a N2 + H2 + O2 gas mixture is due to iridium decomposing the neutral hydr...
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| Format: | Article |
| Language: | English |
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Kemerovo State University
2013-09-01
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| Series: | Вестник Кемеровского государственного университета |
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| Online Access: | https://vestnik.kemsu.ru/jour/article/view/306 |
| _version_ | 1827902458252230656 |
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| author | E. A. Kerimov |
| author_facet | E. A. Kerimov |
| author_sort | E. A. Kerimov |
| collection | DOAJ |
| description | Holes in N2 atmosphere were detected on the IrSi surface, obtained by magnetron spraying, the same defects are observed in IrSi, obtained by method of thermal evaporation in vacuum. The decrease in defects size by annealing in a N2 + H2 + O2 gas mixture is due to iridium decomposing the neutral hydrogen atoms, which in turn interact with the adsorbed oxygen, and are further desorbed or replaced to the silicon surface by temperature increasing. |
| first_indexed | 2024-03-12T23:59:35Z |
| format | Article |
| id | doaj.art-0c8fc86b9c3940a789682ce247273d6f |
| institution | Directory Open Access Journal |
| issn | 2078-8975 2078-8983 |
| language | English |
| last_indexed | 2024-03-12T23:59:35Z |
| publishDate | 2013-09-01 |
| publisher | Kemerovo State University |
| record_format | Article |
| series | Вестник Кемеровского государственного университета |
| spelling | doaj.art-0c8fc86b9c3940a789682ce247273d6f2023-07-13T12:08:27ZengKemerovo State UniversityВестник Кемеровского государственного университета2078-89752078-89832013-09-0103-1165169306ELECTROPHYSICAL PROPERTIES OF CONTACTS WITH IRSI – SI SCHOTTKY BARRIERE. A. Kerimov0National Aerospace Agency of AzerbaijanHoles in N2 atmosphere were detected on the IrSi surface, obtained by magnetron spraying, the same defects are observed in IrSi, obtained by method of thermal evaporation in vacuum. The decrease in defects size by annealing in a N2 + H2 + O2 gas mixture is due to iridium decomposing the neutral hydrogen atoms, which in turn interact with the adsorbed oxygen, and are further desorbed or replaced to the silicon surface by temperature increasing.https://vestnik.kemsu.ru/jour/article/view/306schottky barrieriridium silicidegeometric noisephotosensitivityschottky – matrixesannealingdiode structures |
| spellingShingle | E. A. Kerimov ELECTROPHYSICAL PROPERTIES OF CONTACTS WITH IRSI – SI SCHOTTKY BARRIER Вестник Кемеровского государственного университета schottky barrier iridium silicide geometric noise photosensitivity schottky – matrixes annealing diode structures |
| title | ELECTROPHYSICAL PROPERTIES OF CONTACTS WITH IRSI – SI SCHOTTKY BARRIER |
| title_full | ELECTROPHYSICAL PROPERTIES OF CONTACTS WITH IRSI – SI SCHOTTKY BARRIER |
| title_fullStr | ELECTROPHYSICAL PROPERTIES OF CONTACTS WITH IRSI – SI SCHOTTKY BARRIER |
| title_full_unstemmed | ELECTROPHYSICAL PROPERTIES OF CONTACTS WITH IRSI – SI SCHOTTKY BARRIER |
| title_short | ELECTROPHYSICAL PROPERTIES OF CONTACTS WITH IRSI – SI SCHOTTKY BARRIER |
| title_sort | electrophysical properties of contacts with irsi si schottky barrier |
| topic | schottky barrier iridium silicide geometric noise photosensitivity schottky – matrixes annealing diode structures |
| url | https://vestnik.kemsu.ru/jour/article/view/306 |
| work_keys_str_mv | AT eakerimov electrophysicalpropertiesofcontactswithirsisischottkybarrier |