Near-infrared emission in Er:ZnO thin films with embedded Si nanoparticles synthesized by ion implantation
Er-doped ZnO thin films on a SiO _2 /Si substrate were fabricated by radio frequency magnetron sputtering, in which embedded Si nanoparticles (NPs) were formed by ion implantation and subsequent thermal annealing. The effects of Si NPs on the Er photoluminescence (PL) at 1.54 μ m were investigated....
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab9858 |
| _version_ | 1797746237831643136 |
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| author | Kaikai Li Shuang Yu Changsheng Ma Fei Lu Kaijing Liu Yuhang Xu Changdong Ma |
| author_facet | Kaikai Li Shuang Yu Changsheng Ma Fei Lu Kaijing Liu Yuhang Xu Changdong Ma |
| author_sort | Kaikai Li |
| collection | DOAJ |
| description | Er-doped ZnO thin films on a SiO _2 /Si substrate were fabricated by radio frequency magnetron sputtering, in which embedded Si nanoparticles (NPs) were formed by ion implantation and subsequent thermal annealing. The effects of Si NPs on the Er photoluminescence (PL) at 1.54 μ m were investigated. In addition to the typical emission at 1.54 μ m from Er ^3+ , a new 1.16- μ m emission peak was also observed after a thermal treatment. Further annealing resulted in shift of emission intensity between the 1.16- and 1.54- μ m luminescence features. The observed Si nanoparticles (NPs) were ∼4 nm in diameter. The formation of new components Zn _2 SiO _4 and Er _2 Si _2 O _7 was also presented in this study. The 1.16- μ m luminescence is attributed to the Si NPs, and the suppression of Si NPs related emission is caused by consumption of Si in the formation of Er silicate and zinc silicide and the energy transfer between Si NPs and Er ^3+ . The intensity of Er ^3+ related 1.54- μ m PL can be modulated by the Si NPs fabricated by implantation and optimizing the annealing condition. |
| first_indexed | 2024-03-12T15:35:00Z |
| format | Article |
| id | doaj.art-0c95cd0725354ebca35425de28291ef6 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:35:00Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-0c95cd0725354ebca35425de28291ef62023-08-09T16:15:55ZengIOP PublishingMaterials Research Express2053-15912020-01-017606640210.1088/2053-1591/ab9858Near-infrared emission in Er:ZnO thin films with embedded Si nanoparticles synthesized by ion implantationKaikai Li0Shuang Yu1Changsheng Ma2Fei Lu3Kaijing Liu4Yuhang Xu5https://orcid.org/0000-0003-0138-7967Changdong Ma6https://orcid.org/0000-0002-0951-6316School of Information Science and Engineering, Shandong University , Jinan 250100, People’s Republic of ChinaDepartment of Radiation Oncology, Qilu Hospital of Shandong University , Jinan, Shandong 250012, People’s Republic of ChinaDepartment of Radiation Oncology, Shandong Tumor Hospital and Institute , Jinan 250117, People’s Republic of ChinaSchool of Information Science and Engineering, Shandong University , Jinan 250100, People’s Republic of ChinaSchool of Information Science and Engineering, Shandong University , Jinan 250100, People’s Republic of ChinaSchool of Information Science and Engineering, Shandong University , Jinan 250100, People’s Republic of ChinaDepartment of Radiation Oncology, Qilu Hospital of Shandong University , Jinan, Shandong 250012, People’s Republic of ChinaEr-doped ZnO thin films on a SiO _2 /Si substrate were fabricated by radio frequency magnetron sputtering, in which embedded Si nanoparticles (NPs) were formed by ion implantation and subsequent thermal annealing. The effects of Si NPs on the Er photoluminescence (PL) at 1.54 μ m were investigated. In addition to the typical emission at 1.54 μ m from Er ^3+ , a new 1.16- μ m emission peak was also observed after a thermal treatment. Further annealing resulted in shift of emission intensity between the 1.16- and 1.54- μ m luminescence features. The observed Si nanoparticles (NPs) were ∼4 nm in diameter. The formation of new components Zn _2 SiO _4 and Er _2 Si _2 O _7 was also presented in this study. The 1.16- μ m luminescence is attributed to the Si NPs, and the suppression of Si NPs related emission is caused by consumption of Si in the formation of Er silicate and zinc silicide and the energy transfer between Si NPs and Er ^3+ . The intensity of Er ^3+ related 1.54- μ m PL can be modulated by the Si NPs fabricated by implantation and optimizing the annealing condition.https://doi.org/10.1088/2053-1591/ab9858silicon nanoparticlesion implantationphotoluminescencezinc oxidethin film |
| spellingShingle | Kaikai Li Shuang Yu Changsheng Ma Fei Lu Kaijing Liu Yuhang Xu Changdong Ma Near-infrared emission in Er:ZnO thin films with embedded Si nanoparticles synthesized by ion implantation Materials Research Express silicon nanoparticles ion implantation photoluminescence zinc oxide thin film |
| title | Near-infrared emission in Er:ZnO thin films with embedded Si nanoparticles synthesized by ion implantation |
| title_full | Near-infrared emission in Er:ZnO thin films with embedded Si nanoparticles synthesized by ion implantation |
| title_fullStr | Near-infrared emission in Er:ZnO thin films with embedded Si nanoparticles synthesized by ion implantation |
| title_full_unstemmed | Near-infrared emission in Er:ZnO thin films with embedded Si nanoparticles synthesized by ion implantation |
| title_short | Near-infrared emission in Er:ZnO thin films with embedded Si nanoparticles synthesized by ion implantation |
| title_sort | near infrared emission in er zno thin films with embedded si nanoparticles synthesized by ion implantation |
| topic | silicon nanoparticles ion implantation photoluminescence zinc oxide thin film |
| url | https://doi.org/10.1088/2053-1591/ab9858 |
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