GaN and InGaN nanowires prepared by metal-assisted electroless etching: Experimental and theoretical studies
We investigate the optical and structural properties of GaN and InGaN nanowires (NWs) fabricated by metal-assisted electroless etching in a hydrofluoric acid (HF) solution. The emission spectra of GaN and InGaN NWs exhibit a red shift compared to the as-grown samples resulting from an increase in th...
Main Authors: | S. Assa Aravindh, Bin Xin, Somak Mitra, Iman S. Roqan, Adel Najar |
---|---|
Format: | Article |
Language: | English |
Published: |
Elsevier
2020-12-01
|
Series: | Results in Physics |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379720318945 |
Similar Items
-
Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
by: Liwen Cheng, et al.
Published: (2021-08-01) -
MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
by: Haruka Matsuura, et al.
Published: (2019-04-01) -
Defect-impurity complex induced long-range ferromagnetism in GaN nanowires
by: S Assa Aravindh, et al.
Published: (2015-01-01) -
Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire
by: Song, T.L., et al.
Published: (2003) -
Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs
by: Tian Yuan, et al.
Published: (2016-01-01)