A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates control
Summary: As the limited carrier densities in atomic thin materials can be well controlled by electrostatic gates, p-n junctions based on two-dimensional materials in the coplanar split-gate configuration can work as photodetectors or light-emitting diodes. These coplanar gates can be fabricated in a...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2022-10-01
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| Series: | iScience |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589004222014365 |
| _version_ | 1811201518114701312 |
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| author | Zhou Zhang Junxin Chen Hao Jia Jianfa Chen Feng Li Ximiao Wang Shaojing Liu Hai Ou Song Liu Huanjun Chen Ya-Qing Bie Shaozhi Deng |
| author_facet | Zhou Zhang Junxin Chen Hao Jia Jianfa Chen Feng Li Ximiao Wang Shaojing Liu Hai Ou Song Liu Huanjun Chen Ya-Qing Bie Shaozhi Deng |
| author_sort | Zhou Zhang |
| collection | DOAJ |
| description | Summary: As the limited carrier densities in atomic thin materials can be well controlled by electrostatic gates, p-n junctions based on two-dimensional materials in the coplanar split-gate configuration can work as photodetectors or light-emitting diodes. These coplanar gates can be fabricated in a simple one-step lithography process and are frequently used in hybrid integration with on-chip optical structures. However, the polarization-dependent responsivity of such a configuration is less explored in the near-infrared band, and a clear understanding is still missing. Here we fabricate near-infrared tunable multiple modes twisted bilayer graphene photodetector enabled by the coplanar split-gate control and confirm that the photothermoelectric effect governs the photovoltage mechanism of the p-n junction mode. Our study also elucidates that the discrepancy of the responsivities under different linear polarizations is owing to the different cavity modes and provides a valuable example for designing chip-integrated optoelectronic devices. |
| first_indexed | 2024-04-12T02:21:50Z |
| format | Article |
| id | doaj.art-0cf49893c1dd4cfa9bdd167be3e955b7 |
| institution | Directory Open Access Journal |
| issn | 2589-0042 |
| language | English |
| last_indexed | 2024-04-12T02:21:50Z |
| publishDate | 2022-10-01 |
| publisher | Elsevier |
| record_format | Article |
| series | iScience |
| spelling | doaj.art-0cf49893c1dd4cfa9bdd167be3e955b72022-12-22T03:52:05ZengElsevieriScience2589-00422022-10-012510105164A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates controlZhou Zhang0Junxin Chen1Hao Jia2Jianfa Chen3Feng Li4Ximiao Wang5Shaojing Liu6Hai Ou7Song Liu8Huanjun Chen9Ya-Qing Bie10Shaozhi Deng11School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China; State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510006, ChinaSchool of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China; State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510006, ChinaShenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, ChinaSchool of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China; State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510006, ChinaSchool of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China; State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510006, ChinaSchool of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China; State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510006, ChinaSchool of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China; State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510006, ChinaShenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China; State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510006, ChinaSchool of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China; State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510006, China; Corresponding authorSchool of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China; State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510006, China; Corresponding authorSummary: As the limited carrier densities in atomic thin materials can be well controlled by electrostatic gates, p-n junctions based on two-dimensional materials in the coplanar split-gate configuration can work as photodetectors or light-emitting diodes. These coplanar gates can be fabricated in a simple one-step lithography process and are frequently used in hybrid integration with on-chip optical structures. However, the polarization-dependent responsivity of such a configuration is less explored in the near-infrared band, and a clear understanding is still missing. Here we fabricate near-infrared tunable multiple modes twisted bilayer graphene photodetector enabled by the coplanar split-gate control and confirm that the photothermoelectric effect governs the photovoltage mechanism of the p-n junction mode. Our study also elucidates that the discrepancy of the responsivities under different linear polarizations is owing to the different cavity modes and provides a valuable example for designing chip-integrated optoelectronic devices.http://www.sciencedirect.com/science/article/pii/S2589004222014365Optical materialsNanomaterialsElectronic materials |
| spellingShingle | Zhou Zhang Junxin Chen Hao Jia Jianfa Chen Feng Li Ximiao Wang Shaojing Liu Hai Ou Song Liu Huanjun Chen Ya-Qing Bie Shaozhi Deng A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates control iScience Optical materials Nanomaterials Electronic materials |
| title | A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates control |
| title_full | A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates control |
| title_fullStr | A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates control |
| title_full_unstemmed | A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates control |
| title_short | A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates control |
| title_sort | multimode photodetector with polarization dependent near infrared responsivity using the tunable split dual gates control |
| topic | Optical materials Nanomaterials Electronic materials |
| url | http://www.sciencedirect.com/science/article/pii/S2589004222014365 |
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