Degradation of magnetic tunnel junctions with thin AlOx barrier
The degradation of magnetic tunnel junctions (MTJs) with AlOx barrier was experimentally investigated. Constant voltage stress (CVS) measurement was carried out to monitor the time evolution of the conductance and tunneling magnetoresistance (TMR) of MTJs. The gradual increase of the stress-induced...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2007-01-01
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| Series: | Science and Technology of Advanced Materials |
| Online Access: | http://www.iop.org/EJ/abstract/1468-6996/8/3/A21 |
| _version_ | 1818544278063808512 |
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| author | Tadashi Mihara, Yoshinari Kamakura, Masato Morifuji and Kenji Taniguchi |
| author_facet | Tadashi Mihara, Yoshinari Kamakura, Masato Morifuji and Kenji Taniguchi |
| author_sort | Tadashi Mihara, Yoshinari Kamakura, Masato Morifuji and Kenji Taniguchi |
| collection | DOAJ |
| description | The degradation of magnetic tunnel junctions (MTJs) with AlOx barrier was experimentally investigated. Constant voltage stress (CVS) measurement was carried out to monitor the time evolution of the conductance and tunneling magnetoresistance (TMR) of MTJs. The gradual increase of the stress-induced leakage current (SILC) was observed prior to the breakdown, following a power law function of stress time with an exponent of about 0.2–0.4, which is similar to the case of the ultrathin gate oxide films in MOSFETs. The measured TMR for SILC suggests that the spin-dependent current component would be involved in the early stage of degradation, while spin-independent conduction becomes dominant before the breakdown resulting in a decrease of TMR. |
| first_indexed | 2024-12-11T22:46:24Z |
| format | Article |
| id | doaj.art-0d11137be1744b14b86ebed5eeeca71d |
| institution | Directory Open Access Journal |
| issn | 1468-6996 1878-5514 |
| language | English |
| last_indexed | 2024-12-11T22:46:24Z |
| publishDate | 2007-01-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Science and Technology of Advanced Materials |
| spelling | doaj.art-0d11137be1744b14b86ebed5eeeca71d2022-12-22T00:47:35ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142007-01-0183225Degradation of magnetic tunnel junctions with thin AlOx barrierTadashi Mihara, Yoshinari Kamakura, Masato Morifuji and Kenji TaniguchiThe degradation of magnetic tunnel junctions (MTJs) with AlOx barrier was experimentally investigated. Constant voltage stress (CVS) measurement was carried out to monitor the time evolution of the conductance and tunneling magnetoresistance (TMR) of MTJs. The gradual increase of the stress-induced leakage current (SILC) was observed prior to the breakdown, following a power law function of stress time with an exponent of about 0.2–0.4, which is similar to the case of the ultrathin gate oxide films in MOSFETs. The measured TMR for SILC suggests that the spin-dependent current component would be involved in the early stage of degradation, while spin-independent conduction becomes dominant before the breakdown resulting in a decrease of TMR.http://www.iop.org/EJ/abstract/1468-6996/8/3/A21 |
| spellingShingle | Tadashi Mihara, Yoshinari Kamakura, Masato Morifuji and Kenji Taniguchi Degradation of magnetic tunnel junctions with thin AlOx barrier Science and Technology of Advanced Materials |
| title | Degradation of magnetic tunnel junctions with thin AlOx barrier |
| title_full | Degradation of magnetic tunnel junctions with thin AlOx barrier |
| title_fullStr | Degradation of magnetic tunnel junctions with thin AlOx barrier |
| title_full_unstemmed | Degradation of magnetic tunnel junctions with thin AlOx barrier |
| title_short | Degradation of magnetic tunnel junctions with thin AlOx barrier |
| title_sort | degradation of magnetic tunnel junctions with thin alox barrier |
| url | http://www.iop.org/EJ/abstract/1468-6996/8/3/A21 |
| work_keys_str_mv | AT tadashimiharayoshinarikamakuramasatomorifujiandkenjitaniguchi degradationofmagnetictunneljunctionswiththinaloxbarrier |