The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot

The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot

In this work, we calculated the energy levels of truncatedpyramidal-shaped InAs/GaAs QDs by using the finiteelement method by taking into account the ambienttemperature, because the system under study is notsymmetric, it is impossible to use the analytical methodto find the wave functions and energy...

ver descrição completa

Detalhes bibliográficos
Main Authors:	MohammadAmin ZekavatFetrat, Mohammad Sabaeian, Ghahraman Solookinejad
Formato:	Artigo
Idioma:	English
Publicado em:	Islamic Azad University, Marvdasht Branch 2021-08-01
Colecção:	Journal of Optoelectronical Nanostructures
Assuntos:	quantum dot linear and nonlinear susceptibility ambient temperature
Acesso em linha:	https://jopn.marvdasht.iau.ir/article_4980_b85859949c9fac38eae20ef4d9dd6ac8.pdf

Registos relacionados

Quantitative strain analysis of InAs/GaAs quantum dot materials
Por: Vullum, Per Erik, et al.
Publicado em: (2018)

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
Por: Sergii Golovynskyi, et al.
Publicado em: (2017-05-01)

Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
Por: Krause B, et al.
Publicado em: (2006-01-01)

Effects of Thermal Annealing on the Dynamic Characteristics of InAs/GaAs Quantum Dot Lasers
Por: H. X. Zhao, et al.
Publicado em: (2010-01-01)

Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots
Por: Kiravittaya S, et al.
Publicado em: (2006-01-01)

Size and Shape Evolution of GaAsSb-Capped InAs/GaAs Quantum Dots: Dependence on the Sb Content
Por: Khairiah Alshehri, et al.
Publicado em: (2019-10-01)

Evolution of wetting layer in InAs/GaAs quantum dot system
Por: Chen YH, et al.
Publicado em: (2006-01-01)

Improvement of Performance of Modulation Response and Bandwidth of InAs/GaAs Quantum-Dot Laser Diode
Por: Thaira Z. Altayyar, et al.
Publicado em: (2015-06-01)

GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots
Por: Yueguang Zhou, et al.
Publicado em: (2024-01-01)

Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing
Por: Deyan Dai, et al.
Publicado em: (2025-01-01)

Influence of the Arsenic Pressure during Rapid Overgrowth of InAs/GaAs Quantum Dots on Their Photoluminescence Properties
Por: Sergey Balakirev, et al.
Publicado em: (2023-09-01)

The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots
Por: Mohammadreza Shahzadeh, et al.
Publicado em: (2014-06-01)

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
Por: Strom NW, et al.
Publicado em: (2007-01-01)

Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate
Por: Xiangjun Shang, et al.
Publicado em: (2023-06-01)

Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
Por: Liang BL, et al.
Publicado em: (2007-01-01)

Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform
Por: Sittig Robert, et al.
Publicado em: (2022-02-01)

The influence of deformations on single electron states in a molecule formed from three quantum dots of the heterosystem InAs/GaAs
Por: V.B Hols'kyi, et al.
Publicado em: (2022-12-01)

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
Por: Xiang-Bin Su, et al.
Publicado em: (2018-02-01)

Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs
Por: Yao Liu, et al.
Publicado em: (2016-11-01)

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate
Por: Siming Chen, et al.
Publicado em: (2015-06-01)

1.3 µm InAs/GaAs Quantum‐Dot Lasers with p‐Type, n‐Type, and Co‐Doped Modulation
Por: Huiwen Deng, et al.
Publicado em: (2024-10-01)

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices
Por: Sergii Golovynskyi, et al.
Publicado em: (2017-10-01)

High-efficiency InAs/GaAs quantum dot intermediate band solar cell achieved through current constraint engineering
Por: Tomah Sogabe, et al.
Publicado em: (2023-06-01)

Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers
Por: Tong CZ, et al.
Publicado em: (2011-01-01)

Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers
Por: Maronchuk I. E., et al.
Publicado em: (2008-12-01)

Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric Barriers in a Photonic Nanoantenna
Por: Maxim Rakhlin, et al.
Publicado em: (2022-05-01)

Erratum: “The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots” [AIP Advances 4, 067113 (2014)]
Por: Mohammadreza Shahzadeh, et al.
Publicado em: (2014-09-01)

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering
Por: Sergei N. Chebotarev, et al.
Publicado em: (2017-01-01)

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
Por: Paladugu, M, et al.
Publicado em: (2008)

Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement
Por: Xiangjun Shang, et al.
Publicado em: (2021-09-01)

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser
Por: Yong Du, et al.
Publicado em: (2022-09-01)

Optical properties of GaAs/Al_xGa_{1-x}As/GaAs quantum dot with off-central impurity driven by electric field
Por: V.A. Holovatsky, et al.
Publicado em: (2018-03-01)

Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
Por: Lorenz Pulgar-Velásquez, et al.
Publicado em: (2021-10-01)

Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth
Por: Toujyou Takashi, et al.
Publicado em: (2010-01-01)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
Por: Roslan, Sharizar, et al.
Publicado em: (2006)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
Por: Zulkafli Othaman, author, et al.
Publicado em: (2007)

Optical properties of InAs/GaAs quantum dot superlattice structures
Por: Ali Imran, et al.
Publicado em: (2018-06-01)

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application
Por: Qi-zhu Li, et al.
Publicado em: (2018-09-01)

Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers
Por: Mikhail V. Maximov, et al.
Publicado em: (2023-09-01)

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots
Por: Christian Heyn, et al.
Publicado em: (2022-08-01)