The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot

The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot

In this work, we calculated the energy levels of truncatedpyramidal-shaped InAs/GaAs QDs by using the finiteelement method by taking into account the ambienttemperature, because the system under study is notsymmetric, it is impossible to use the analytical methodto find the wave functions and energy...

Cur síos iomlán

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí:	MohammadAmin ZekavatFetrat, Mohammad Sabaeian, Ghahraman Solookinejad
Formáid:	Alt
Teanga:	English
Foilsithe / Cruthaithe:	Islamic Azad University, Marvdasht Branch 2021-08-01
Sraith:	Journal of Optoelectronical Nanostructures
Ábhair:	quantum dot linear and nonlinear susceptibility ambient temperature
Rochtain ar líne:	https://jopn.marvdasht.iau.ir/article_4980_b85859949c9fac38eae20ef4d9dd6ac8.pdf

Míreanna comhchosúla

Quantitative strain analysis of InAs/GaAs quantum dot materials
de réir: Vullum, Per Erik, et al.
Foilsithe / Cruthaithe: (2018)

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
de réir: Sergii Golovynskyi, et al.
Foilsithe / Cruthaithe: (2017-05-01)

Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
de réir: Krause B, et al.
Foilsithe / Cruthaithe: (2006-01-01)

Effects of Thermal Annealing on the Dynamic Characteristics of InAs/GaAs Quantum Dot Lasers
de réir: H. X. Zhao, et al.
Foilsithe / Cruthaithe: (2010-01-01)

Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots
de réir: Kiravittaya S, et al.
Foilsithe / Cruthaithe: (2006-01-01)

Size and Shape Evolution of GaAsSb-Capped InAs/GaAs Quantum Dots: Dependence on the Sb Content
de réir: Khairiah Alshehri, et al.
Foilsithe / Cruthaithe: (2019-10-01)

Evolution of wetting layer in InAs/GaAs quantum dot system
de réir: Chen YH, et al.
Foilsithe / Cruthaithe: (2006-01-01)

Improvement of Performance of Modulation Response and Bandwidth of InAs/GaAs Quantum-Dot Laser Diode
de réir: Thaira Z. Altayyar, et al.
Foilsithe / Cruthaithe: (2015-06-01)

GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots
de réir: Yueguang Zhou, et al.
Foilsithe / Cruthaithe: (2024-01-01)

Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing
de réir: Deyan Dai, et al.
Foilsithe / Cruthaithe: (2025-01-01)

Influence of the Arsenic Pressure during Rapid Overgrowth of InAs/GaAs Quantum Dots on Their Photoluminescence Properties
de réir: Sergey Balakirev, et al.
Foilsithe / Cruthaithe: (2023-09-01)

The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots
de réir: Mohammadreza Shahzadeh, et al.
Foilsithe / Cruthaithe: (2014-06-01)

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
de réir: Strom NW, et al.
Foilsithe / Cruthaithe: (2007-01-01)

Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate
de réir: Xiangjun Shang, et al.
Foilsithe / Cruthaithe: (2023-06-01)

Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
de réir: Liang BL, et al.
Foilsithe / Cruthaithe: (2007-01-01)

Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform
de réir: Sittig Robert, et al.
Foilsithe / Cruthaithe: (2022-02-01)

The influence of deformations on single electron states in a molecule formed from three quantum dots of the heterosystem InAs/GaAs
de réir: V.B Hols'kyi, et al.
Foilsithe / Cruthaithe: (2022-12-01)

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
de réir: Xiang-Bin Su, et al.
Foilsithe / Cruthaithe: (2018-02-01)

Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs
de réir: Yao Liu, et al.
Foilsithe / Cruthaithe: (2016-11-01)

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate
de réir: Siming Chen, et al.
Foilsithe / Cruthaithe: (2015-06-01)

1.3 µm InAs/GaAs Quantum‐Dot Lasers with p‐Type, n‐Type, and Co‐Doped Modulation
de réir: Huiwen Deng, et al.
Foilsithe / Cruthaithe: (2024-10-01)

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices
de réir: Sergii Golovynskyi, et al.
Foilsithe / Cruthaithe: (2017-10-01)

High-efficiency InAs/GaAs quantum dot intermediate band solar cell achieved through current constraint engineering
de réir: Tomah Sogabe, et al.
Foilsithe / Cruthaithe: (2023-06-01)

Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers
de réir: Tong CZ, et al.
Foilsithe / Cruthaithe: (2011-01-01)

Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers
de réir: Maronchuk I. E., et al.
Foilsithe / Cruthaithe: (2008-12-01)

Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric Barriers in a Photonic Nanoantenna
de réir: Maxim Rakhlin, et al.
Foilsithe / Cruthaithe: (2022-05-01)

Erratum: “The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots” [AIP Advances 4, 067113 (2014)]
de réir: Mohammadreza Shahzadeh, et al.
Foilsithe / Cruthaithe: (2014-09-01)

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering
de réir: Sergei N. Chebotarev, et al.
Foilsithe / Cruthaithe: (2017-01-01)

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
de réir: Paladugu, M, et al.
Foilsithe / Cruthaithe: (2008)

Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement
de réir: Xiangjun Shang, et al.
Foilsithe / Cruthaithe: (2021-09-01)

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser
de réir: Yong Du, et al.
Foilsithe / Cruthaithe: (2022-09-01)

Optical properties of GaAs/Al_xGa_{1-x}As/GaAs quantum dot with off-central impurity driven by electric field
de réir: V.A. Holovatsky, et al.
Foilsithe / Cruthaithe: (2018-03-01)

Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
de réir: Lorenz Pulgar-Velásquez, et al.
Foilsithe / Cruthaithe: (2021-10-01)

Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth
de réir: Toujyou Takashi, et al.
Foilsithe / Cruthaithe: (2010-01-01)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
de réir: Roslan, Sharizar, et al.
Foilsithe / Cruthaithe: (2006)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
de réir: Zulkafli Othaman, author, et al.
Foilsithe / Cruthaithe: (2007)

Optical properties of InAs/GaAs quantum dot superlattice structures
de réir: Ali Imran, et al.
Foilsithe / Cruthaithe: (2018-06-01)

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application
de réir: Qi-zhu Li, et al.
Foilsithe / Cruthaithe: (2018-09-01)

Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers
de réir: Mikhail V. Maximov, et al.
Foilsithe / Cruthaithe: (2023-09-01)

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots
de réir: Christian Heyn, et al.
Foilsithe / Cruthaithe: (2022-08-01)