The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot

The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot

In this work, we calculated the energy levels of truncatedpyramidal-shaped InAs/GaAs QDs by using the finiteelement method by taking into account the ambienttemperature, because the system under study is notsymmetric, it is impossible to use the analytical methodto find the wave functions and energy...

Descrizione completa

Dettagli Bibliografici
Autori principali:	MohammadAmin ZekavatFetrat, Mohammad Sabaeian, Ghahraman Solookinejad
Natura:	Articolo
Lingua:	English
Pubblicazione:	Islamic Azad University, Marvdasht Branch 2021-08-01
Serie:	Journal of Optoelectronical Nanostructures
Soggetti:	quantum dot linear and nonlinear susceptibility ambient temperature
Accesso online:	https://jopn.marvdasht.iau.ir/article_4980_b85859949c9fac38eae20ef4d9dd6ac8.pdf

Documenti analoghi

Quantitative strain analysis of InAs/GaAs quantum dot materials
di: Vullum, Per Erik, et al.
Pubblicazione: (2018)

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
di: Sergii Golovynskyi, et al.
Pubblicazione: (2017-05-01)

Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
di: Krause B, et al.
Pubblicazione: (2006-01-01)

Effects of Thermal Annealing on the Dynamic Characteristics of InAs/GaAs Quantum Dot Lasers
di: H. X. Zhao, et al.
Pubblicazione: (2010-01-01)

Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots
di: Kiravittaya S, et al.
Pubblicazione: (2006-01-01)

Size and Shape Evolution of GaAsSb-Capped InAs/GaAs Quantum Dots: Dependence on the Sb Content
di: Khairiah Alshehri, et al.
Pubblicazione: (2019-10-01)

Evolution of wetting layer in InAs/GaAs quantum dot system
di: Chen YH, et al.
Pubblicazione: (2006-01-01)

Improvement of Performance of Modulation Response and Bandwidth of InAs/GaAs Quantum-Dot Laser Diode
di: Thaira Z. Altayyar, et al.
Pubblicazione: (2015-06-01)

GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots
di: Yueguang Zhou, et al.
Pubblicazione: (2024-01-01)

Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing
di: Deyan Dai, et al.
Pubblicazione: (2025-01-01)

Influence of the Arsenic Pressure during Rapid Overgrowth of InAs/GaAs Quantum Dots on Their Photoluminescence Properties
di: Sergey Balakirev, et al.
Pubblicazione: (2023-09-01)

The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots
di: Mohammadreza Shahzadeh, et al.
Pubblicazione: (2014-06-01)

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
di: Strom NW, et al.
Pubblicazione: (2007-01-01)

Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate
di: Xiangjun Shang, et al.
Pubblicazione: (2023-06-01)

Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
di: Liang BL, et al.
Pubblicazione: (2007-01-01)

Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform
di: Sittig Robert, et al.
Pubblicazione: (2022-02-01)

The influence of deformations on single electron states in a molecule formed from three quantum dots of the heterosystem InAs/GaAs
di: V.B Hols'kyi, et al.
Pubblicazione: (2022-12-01)

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
di: Xiang-Bin Su, et al.
Pubblicazione: (2018-02-01)

Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs
di: Yao Liu, et al.
Pubblicazione: (2016-11-01)

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate
di: Siming Chen, et al.
Pubblicazione: (2015-06-01)

1.3 µm InAs/GaAs Quantum‐Dot Lasers with p‐Type, n‐Type, and Co‐Doped Modulation
di: Huiwen Deng, et al.
Pubblicazione: (2024-10-01)

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices
di: Sergii Golovynskyi, et al.
Pubblicazione: (2017-10-01)

High-efficiency InAs/GaAs quantum dot intermediate band solar cell achieved through current constraint engineering
di: Tomah Sogabe, et al.
Pubblicazione: (2023-06-01)

Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers
di: Tong CZ, et al.
Pubblicazione: (2011-01-01)

Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers
di: Maronchuk I. E., et al.
Pubblicazione: (2008-12-01)

Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric Barriers in a Photonic Nanoantenna
di: Maxim Rakhlin, et al.
Pubblicazione: (2022-05-01)

Erratum: “The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots” [AIP Advances 4, 067113 (2014)]
di: Mohammadreza Shahzadeh, et al.
Pubblicazione: (2014-09-01)

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering
di: Sergei N. Chebotarev, et al.
Pubblicazione: (2017-01-01)

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
di: Paladugu, M, et al.
Pubblicazione: (2008)

Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement
di: Xiangjun Shang, et al.
Pubblicazione: (2021-09-01)

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser
di: Yong Du, et al.
Pubblicazione: (2022-09-01)

Optical properties of GaAs/Al_xGa_{1-x}As/GaAs quantum dot with off-central impurity driven by electric field
di: V.A. Holovatsky, et al.
Pubblicazione: (2018-03-01)

Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
di: Lorenz Pulgar-Velásquez, et al.
Pubblicazione: (2021-10-01)

Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth
di: Toujyou Takashi, et al.
Pubblicazione: (2010-01-01)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
di: Roslan, Sharizar, et al.
Pubblicazione: (2006)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
di: Zulkafli Othaman, author, et al.
Pubblicazione: (2007)

Optical properties of InAs/GaAs quantum dot superlattice structures
di: Ali Imran, et al.
Pubblicazione: (2018-06-01)

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application
di: Qi-zhu Li, et al.
Pubblicazione: (2018-09-01)

Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers
di: Mikhail V. Maximov, et al.
Pubblicazione: (2023-09-01)

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots
di: Christian Heyn, et al.
Pubblicazione: (2022-08-01)