The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot

The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot

In this work, we calculated the energy levels of truncatedpyramidal-shaped InAs/GaAs QDs by using the finiteelement method by taking into account the ambienttemperature, because the system under study is notsymmetric, it is impossible to use the analytical methodto find the wave functions and energy...

Bibliográfalaš dieđut
Váldodahkkit:	MohammadAmin ZekavatFetrat, Mohammad Sabaeian, Ghahraman Solookinejad
Materiálatiipa:	Artihkal
Giella:	English
Almmustuhtton:	Islamic Azad University, Marvdasht Branch 2021-08-01
Ráidu:	Journal of Optoelectronical Nanostructures
Fáttát:	quantum dot linear and nonlinear susceptibility ambient temperature
Liŋkkat:	https://jopn.marvdasht.iau.ir/article_4980_b85859949c9fac38eae20ef4d9dd6ac8.pdf

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Dahkki: Krause B, et al.
Almmustuhtton: (2006-01-01)

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Dahkki: H. X. Zhao, et al.
Almmustuhtton: (2010-01-01)

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Dahkki: Kiravittaya S, et al.
Almmustuhtton: (2006-01-01)

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Almmustuhtton: (2006-01-01)

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Dahkki: Thaira Z. Altayyar, et al.
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Dahkki: Mohammadreza Shahzadeh, et al.
Almmustuhtton: (2014-06-01)

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
Dahkki: Strom NW, et al.
Almmustuhtton: (2007-01-01)

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Dahkki: Xiangjun Shang, et al.
Almmustuhtton: (2023-06-01)

Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
Dahkki: Liang BL, et al.
Almmustuhtton: (2007-01-01)

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Dahkki: Sittig Robert, et al.
Almmustuhtton: (2022-02-01)

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Dahkki: Yao Liu, et al.
Almmustuhtton: (2016-11-01)

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Almmustuhtton: (2015-06-01)

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Almmustuhtton: (2017-10-01)

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Almmustuhtton: (2023-06-01)

Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers
Dahkki: Tong CZ, et al.
Almmustuhtton: (2011-01-01)

Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers
Dahkki: Maronchuk I. E., et al.
Almmustuhtton: (2008-12-01)

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Dahkki: Maxim Rakhlin, et al.
Almmustuhtton: (2022-05-01)

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Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering
Dahkki: Sergei N. Chebotarev, et al.
Almmustuhtton: (2017-01-01)

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Dahkki: Paladugu, M, et al.
Almmustuhtton: (2008)

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Dahkki: Xiangjun Shang, et al.
Almmustuhtton: (2021-09-01)

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