Design of power Darlington layout

A power Darlington array layout structure is designed based on the 70 V high voltage bipolar process. The structure is suitable for the output stage layout of the single-chip high-voltage power device. It consists of symmetric interdigitated array unit structure, and has the characteristics of large...

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Main Authors: Xu Kaiying, Ma Kui
Format: Article
Language:zho
Published: National Computer System Engineering Research Institute of China 2019-05-01
Series:Dianzi Jishu Yingyong
Subjects:
Online Access:http://www.chinaaet.com/article/3000101273
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author Xu Kaiying
Ma Kui
author_facet Xu Kaiying
Ma Kui
author_sort Xu Kaiying
collection DOAJ
description A power Darlington array layout structure is designed based on the 70 V high voltage bipolar process. The structure is suitable for the output stage layout of the single-chip high-voltage power device. It consists of symmetric interdigitated array unit structure, and has the characteristics of large current driving capability, uniform heat dissipation, good stability, and high area utilization. The interdigitated-emitter and interdigitated base ensure a high speed while taking into account the matching and symmetry of the array power transistor. The two-sided design of the interdigitated base increases the effective emitter perimeter and improves current conduction capability. The improved equi-plane wiring reduces the wiring steps and makes the high current layout possible. Simulation based on calibre proves the layout has the ability to output current of 9 A.
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spelling doaj.art-0d443bb9e9a042f7a6cd5b8a1c5601082022-12-21T23:20:40ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982019-05-01455313310.16157/j.issn.0258-7998.1824933000101273Design of power Darlington layoutXu Kaiying0Ma Kui1School of Big Data and Information Engineering,Guizhou University,Guiyang 550025,ChinaSchool of Big Data and Information Engineering,Guizhou University,Guiyang 550025,ChinaA power Darlington array layout structure is designed based on the 70 V high voltage bipolar process. The structure is suitable for the output stage layout of the single-chip high-voltage power device. It consists of symmetric interdigitated array unit structure, and has the characteristics of large current driving capability, uniform heat dissipation, good stability, and high area utilization. The interdigitated-emitter and interdigitated base ensure a high speed while taking into account the matching and symmetry of the array power transistor. The two-sided design of the interdigitated base increases the effective emitter perimeter and improves current conduction capability. The improved equi-plane wiring reduces the wiring steps and makes the high current layout possible. Simulation based on calibre proves the layout has the ability to output current of 9 A.http://www.chinaaet.com/article/3000101273interdigitated structurearray unithigh current driveDarlington layout
spellingShingle Xu Kaiying
Ma Kui
Design of power Darlington layout
Dianzi Jishu Yingyong
interdigitated structure
array unit
high current drive
Darlington layout
title Design of power Darlington layout
title_full Design of power Darlington layout
title_fullStr Design of power Darlington layout
title_full_unstemmed Design of power Darlington layout
title_short Design of power Darlington layout
title_sort design of power darlington layout
topic interdigitated structure
array unit
high current drive
Darlington layout
url http://www.chinaaet.com/article/3000101273
work_keys_str_mv AT xukaiying designofpowerdarlingtonlayout
AT makui designofpowerdarlingtonlayout