Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity
In this study, indium oxide nanowires of high-density were synthesized by chemical vapor deposition (CVD) through a vapor–liquid–solid (VLS) mechanism without carrier gas. The indium oxide nanowires possess great morphology with an aspect ratio of over 400 and an average diameter of 50 nm; the lengt...
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| Format: | Article |
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MDPI AG
2020-10-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/11/2100 |
| _version_ | 1797550072759582720 |
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| author | Yu-Yang Chen Shu-Meng Yang Kuo-Chang Lu |
| author_facet | Yu-Yang Chen Shu-Meng Yang Kuo-Chang Lu |
| author_sort | Yu-Yang Chen |
| collection | DOAJ |
| description | In this study, indium oxide nanowires of high-density were synthesized by chemical vapor deposition (CVD) through a vapor–liquid–solid (VLS) mechanism without carrier gas. The indium oxide nanowires possess great morphology with an aspect ratio of over 400 and an average diameter of 50 nm; the length of the nanowires could be over 30 μm, confirmed by field-emission scanning electron microscopy (SEM). Characterization was conducted with X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence spectrum (PL). High-resolution TEM studies confirm that the grown nanowires were single crystalline c-In<sub>2</sub>O<sub>3</sub> nanowires of body-centered cubic structures. The room temperature PL spectrum shows a strong peak around 2.22 eV, originating from the defects in the crystal structure. The electrical resistivity of a single indium oxide nanowire was measured to be 1.0 × 10<sup>−4</sup> Ω⋅cm, relatively low as compared with previous works, which may result from the abundant oxygen vacancies in the nanowires, acting as unintentional doping. |
| first_indexed | 2024-03-10T15:23:16Z |
| format | Article |
| id | doaj.art-0d5941081a0e4b03aafbbbb0c0521d03 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T15:23:16Z |
| publishDate | 2020-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-0d5941081a0e4b03aafbbbb0c0521d032023-11-20T18:14:11ZengMDPI AGNanomaterials2079-49912020-10-011011210010.3390/nano10112100Synthesis of High-Density Indium Oxide Nanowires with Low Electrical ResistivityYu-Yang Chen0Shu-Meng Yang1Kuo-Chang Lu2Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, TaiwanDepartment of Materials Science and Engineering, National Cheng Kung University, Tainan 701, TaiwanDepartment of Materials Science and Engineering, National Cheng Kung University, Tainan 701, TaiwanIn this study, indium oxide nanowires of high-density were synthesized by chemical vapor deposition (CVD) through a vapor–liquid–solid (VLS) mechanism without carrier gas. The indium oxide nanowires possess great morphology with an aspect ratio of over 400 and an average diameter of 50 nm; the length of the nanowires could be over 30 μm, confirmed by field-emission scanning electron microscopy (SEM). Characterization was conducted with X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence spectrum (PL). High-resolution TEM studies confirm that the grown nanowires were single crystalline c-In<sub>2</sub>O<sub>3</sub> nanowires of body-centered cubic structures. The room temperature PL spectrum shows a strong peak around 2.22 eV, originating from the defects in the crystal structure. The electrical resistivity of a single indium oxide nanowire was measured to be 1.0 × 10<sup>−4</sup> Ω⋅cm, relatively low as compared with previous works, which may result from the abundant oxygen vacancies in the nanowires, acting as unintentional doping.https://www.mdpi.com/2079-4991/10/11/2100indium oxidenanowirechemical vapor depositioncarbothermalresistivity |
| spellingShingle | Yu-Yang Chen Shu-Meng Yang Kuo-Chang Lu Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity Nanomaterials indium oxide nanowire chemical vapor deposition carbothermal resistivity |
| title | Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity |
| title_full | Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity |
| title_fullStr | Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity |
| title_full_unstemmed | Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity |
| title_short | Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity |
| title_sort | synthesis of high density indium oxide nanowires with low electrical resistivity |
| topic | indium oxide nanowire chemical vapor deposition carbothermal resistivity |
| url | https://www.mdpi.com/2079-4991/10/11/2100 |
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