Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation
Abstract Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferr...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2019-12-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-019-3181-x |
| _version_ | 1827835423385190400 |
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| author | Ya-Wei Huan Ke Xu Wen-Jun Liu Hao Zhang Dmitriy Anatolyevich Golosov Chang-Tai Xia Hong-Yu Yu Xiao-Han Wu Qing-Qing Sun Shi-Jin Ding |
| author_facet | Ya-Wei Huan Ke Xu Wen-Jun Liu Hao Zhang Dmitriy Anatolyevich Golosov Chang-Tai Xia Hong-Yu Yu Xiao-Han Wu Qing-Qing Sun Shi-Jin Ding |
| author_sort | Ya-Wei Huan |
| collection | DOAJ |
| description | Abstract Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3( 2- $$ 2- $$01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices. |
| first_indexed | 2024-03-12T06:09:17Z |
| format | Article |
| id | doaj.art-0d6051b1250f4257aae35e23e5d4d004 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T06:09:17Z |
| publishDate | 2019-12-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-0d6051b1250f4257aae35e23e5d4d0042023-09-03T03:14:15ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-12-011411810.1186/s11671-019-3181-xInvestigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with NitridationYa-Wei Huan0Ke Xu1Wen-Jun Liu2Hao Zhang3Dmitriy Anatolyevich Golosov4Chang-Tai Xia5Hong-Yu Yu6Xiao-Han Wu7Qing-Qing Sun8Shi-Jin Ding9State Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityKey Laboratory of Micro and Nano Photonic Structures, Department of Optical Science and Engineering, Fudan UniversityState Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityKey Laboratory of Micro and Nano Photonic Structures, Department of Optical Science and Engineering, Fudan UniversityBelarusian State University of Informatics and RadioelectronicsKey Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of SciencesDepartment of Electrical and Electronic Engineering, Southern University of Science and TechnologyState Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityState Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityState Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityAbstract Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3( 2- $$ 2- $$01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.https://doi.org/10.1186/s11671-019-3181-xNitridation treatmentBand alignmentFew-layer MoS2β-Ga2O3 |
| spellingShingle | Ya-Wei Huan Ke Xu Wen-Jun Liu Hao Zhang Dmitriy Anatolyevich Golosov Chang-Tai Xia Hong-Yu Yu Xiao-Han Wu Qing-Qing Sun Shi-Jin Ding Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation Nanoscale Research Letters Nitridation treatment Band alignment Few-layer MoS2 β-Ga2O3 |
| title | Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation |
| title_full | Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation |
| title_fullStr | Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation |
| title_full_unstemmed | Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation |
| title_short | Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation |
| title_sort | investigation of band alignment for hybrid 2d mos2 3d β ga2o3 heterojunctions with nitridation |
| topic | Nitridation treatment Band alignment Few-layer MoS2 β-Ga2O3 |
| url | https://doi.org/10.1186/s11671-019-3181-x |
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