Effects of Buffer Layer on Structural Properties of Nonpolar (11<inline-formula><math display="inline"><semantics><mrow><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>0)-Plane GaN Film
Nonpolar (11<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semanti...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-07-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/13/7/1145 |
| _version_ | 1797589635088515072 |
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| author | Jianguo Zhao Boyan Suo Ru Xu Tao Tao Zhe Zhuang Bin Liu Xiong Zhang Jianhua Chang |
| author_facet | Jianguo Zhao Boyan Suo Ru Xu Tao Tao Zhe Zhuang Bin Liu Xiong Zhang Jianhua Chang |
| author_sort | Jianguo Zhao |
| collection | DOAJ |
| description | Nonpolar (11<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>0) <i>a</i>-plane GaN films were grown on semipolar (1<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>02) <i>r</i>-plane sapphire substrates using various buffer layers within a low-pressure metal organic chemical vapor deposition system. The structural properties of nonpolar <i>a</i>-plane GaN films were intensively investigated by X-ray diffraction and Raman spectra measurements. A set of buffer layers were adopted from a GaN layer to a composite layer containing a multiple AlN layers and a gradually varied-Al-content AlGaN layer, the full width at half maximum of the X-ray rocking curves measured along the [0001] and [10<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>0] directions of <i>a</i>-plane GaN were reduced by 35% and 37%, respectively. It was also found that the basal-plane stacking faults (BSFs) density can be effectively reduced by the heterogeneous interface introduced together with the composite buffer layer. An order of magnitude reduction in BSFs density, as low as 2.95 × 10<sup>4</sup> cm<sup>−1</sup>, and a pit-free surface morphology were achieved for the <i>a</i>-plane GaN film grown with the composite buffer layer, which is promising for the development of nonpolar GaN-based devices in the future. |
| first_indexed | 2024-03-11T01:10:21Z |
| format | Article |
| id | doaj.art-0dbd068a22524492898cbf45461b76c6 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T01:10:21Z |
| publishDate | 2023-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-0dbd068a22524492898cbf45461b76c62023-11-18T18:55:08ZengMDPI AGCrystals2073-43522023-07-01137114510.3390/cryst13071145Effects of Buffer Layer on Structural Properties of Nonpolar (11<inline-formula><math display="inline"><semantics><mrow><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>0)-Plane GaN FilmJianguo Zhao0Boyan Suo1Ru Xu2Tao Tao3Zhe Zhuang4Bin Liu5Xiong Zhang6Jianhua Chang7School of Electronics and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, ChinaSchool of Electronics and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, ChinaSchool of Electronics and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, ChinaSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaSchool of integrated Circuits, Nanjing University, Suzhou 215163, ChinaSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaAdvanced Photonics Center, Southeast University, Nanjing 210096, ChinaSchool of Electronics and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, ChinaNonpolar (11<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>0) <i>a</i>-plane GaN films were grown on semipolar (1<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>02) <i>r</i>-plane sapphire substrates using various buffer layers within a low-pressure metal organic chemical vapor deposition system. The structural properties of nonpolar <i>a</i>-plane GaN films were intensively investigated by X-ray diffraction and Raman spectra measurements. A set of buffer layers were adopted from a GaN layer to a composite layer containing a multiple AlN layers and a gradually varied-Al-content AlGaN layer, the full width at half maximum of the X-ray rocking curves measured along the [0001] and [10<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>0] directions of <i>a</i>-plane GaN were reduced by 35% and 37%, respectively. It was also found that the basal-plane stacking faults (BSFs) density can be effectively reduced by the heterogeneous interface introduced together with the composite buffer layer. An order of magnitude reduction in BSFs density, as low as 2.95 × 10<sup>4</sup> cm<sup>−1</sup>, and a pit-free surface morphology were achieved for the <i>a</i>-plane GaN film grown with the composite buffer layer, which is promising for the development of nonpolar GaN-based devices in the future.https://www.mdpi.com/2073-4352/13/7/1145buffer layerstructural propertiesnonpolar GaN |
| spellingShingle | Jianguo Zhao Boyan Suo Ru Xu Tao Tao Zhe Zhuang Bin Liu Xiong Zhang Jianhua Chang Effects of Buffer Layer on Structural Properties of Nonpolar (11<inline-formula><math display="inline"><semantics><mrow><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>0)-Plane GaN Film Crystals buffer layer structural properties nonpolar GaN |
| title | Effects of Buffer Layer on Structural Properties of Nonpolar (11<inline-formula><math display="inline"><semantics><mrow><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>0)-Plane GaN Film |
| title_full | Effects of Buffer Layer on Structural Properties of Nonpolar (11<inline-formula><math display="inline"><semantics><mrow><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>0)-Plane GaN Film |
| title_fullStr | Effects of Buffer Layer on Structural Properties of Nonpolar (11<inline-formula><math display="inline"><semantics><mrow><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>0)-Plane GaN Film |
| title_full_unstemmed | Effects of Buffer Layer on Structural Properties of Nonpolar (11<inline-formula><math display="inline"><semantics><mrow><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>0)-Plane GaN Film |
| title_short | Effects of Buffer Layer on Structural Properties of Nonpolar (11<inline-formula><math display="inline"><semantics><mrow><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>0)-Plane GaN Film |
| title_sort | effects of buffer layer on structural properties of nonpolar 11 inline formula math display inline semantics mrow mover accent true mrow mn 2 mn mrow mo ¯ mo mover mrow semantics math inline formula 0 plane gan film |
| topic | buffer layer structural properties nonpolar GaN |
| url | https://www.mdpi.com/2073-4352/13/7/1145 |
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