A review of gallium nitride power device and its applications in motor drive
Wide band-gap gallium nitride (GaN) device has the advantages of large band-gap, high electron mobility and low dielectric constant. Compared with traditional Si devices, these advantages make it suitable for fast-switching and high-power-density power electronics converters, thus reducing the overa...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
China Electrotechnical Society
2019-03-01
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| Series: | CES Transactions on Electrical Machines and Systems |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8677372 |