Ultra-narrowband and highly-directional THz thermal emitters based on the bound state in the continuum
The development of novel and cost-effective THz emitters, with properties superior to current THz sources, is an active and important field of research. In this work, we propose and numerically demonstrate a simple yet effective approach of realizing terahertz sources working in continuous-wave form...
Main Authors: | , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
De Gruyter
2021-10-01
|
Series: | Nanophotonics |
Subjects: | |
Online Access: | https://doi.org/10.1515/nanoph-2021-0380 |
_version_ | 1797987713423507456 |
---|---|
author | Sun Kaili Zhao Zongshan Cai Yangjian Levy Uriel Han Zhanghua |
author_facet | Sun Kaili Zhao Zongshan Cai Yangjian Levy Uriel Han Zhanghua |
author_sort | Sun Kaili |
collection | DOAJ |
description | The development of novel and cost-effective THz emitters, with properties superior to current THz sources, is an active and important field of research. In this work, we propose and numerically demonstrate a simple yet effective approach of realizing terahertz sources working in continuous-wave form, by incorporating the new physics of bound state in the continuum (BIC) into thermal emitters. By deliberately designing the structure of slotted disk array made of high-resistivity silicon on top of a low index dielectric buffer layer supported by a conducting substrate, a quasi-BIC mode with ultra-high quality factor (∼104) can be supported. Our results reveal that the structure can operate as an efficient terahertz thermal emitter with near-unity emissivity and ultranarrow bandwidth. For example, an emitter working at 1.3914 THz with an ultranarrow linewidth less than 130 MHz, which is roughly 4 orders of magnitude smaller than that obtained from a metallic metamaterial-based thermal emitter, is shown. In addition to its high monochromaticity, this novel emitter has additional important advantages including high directionality and linear polarization, which makes it a promising candidate as the new generation of THz sources. It holds a great potential for practical applications where high spectral resolving capability is required. |
first_indexed | 2024-04-11T07:52:20Z |
format | Article |
id | doaj.art-0dfa7479e664466990e790c611f67651 |
institution | Directory Open Access Journal |
issn | 2192-8614 |
language | English |
last_indexed | 2024-04-11T07:52:20Z |
publishDate | 2021-10-01 |
publisher | De Gruyter |
record_format | Article |
series | Nanophotonics |
spelling | doaj.art-0dfa7479e664466990e790c611f676512022-12-22T04:36:03ZengDe GruyterNanophotonics2192-86142021-10-0110164035404310.1515/nanoph-2021-0380Ultra-narrowband and highly-directional THz thermal emitters based on the bound state in the continuumSun Kaili0Zhao Zongshan1Cai Yangjian2Levy Uriel3Han Zhanghua4Shandong Provincial Key Laboratory of Optics and Photonic Devices, Center of Light Manipulation and applications, School of Physics and Electronics, Shandong Normal University, Jinan250358, ChinaCollege of Environmental Science and Engineering, Qingdao University, Qingdao266071, ChinaShandong Provincial Key Laboratory of Optics and Photonic Devices, Center of Light Manipulation and applications, School of Physics and Electronics, Shandong Normal University, Jinan250358, ChinaDepartment of Applied Physics, The Hebrew University of Jerusalem, Jerusalem, IsraelShandong Provincial Key Laboratory of Optics and Photonic Devices, Center of Light Manipulation and applications, School of Physics and Electronics, Shandong Normal University, Jinan250358, ChinaThe development of novel and cost-effective THz emitters, with properties superior to current THz sources, is an active and important field of research. In this work, we propose and numerically demonstrate a simple yet effective approach of realizing terahertz sources working in continuous-wave form, by incorporating the new physics of bound state in the continuum (BIC) into thermal emitters. By deliberately designing the structure of slotted disk array made of high-resistivity silicon on top of a low index dielectric buffer layer supported by a conducting substrate, a quasi-BIC mode with ultra-high quality factor (∼104) can be supported. Our results reveal that the structure can operate as an efficient terahertz thermal emitter with near-unity emissivity and ultranarrow bandwidth. For example, an emitter working at 1.3914 THz with an ultranarrow linewidth less than 130 MHz, which is roughly 4 orders of magnitude smaller than that obtained from a metallic metamaterial-based thermal emitter, is shown. In addition to its high monochromaticity, this novel emitter has additional important advantages including high directionality and linear polarization, which makes it a promising candidate as the new generation of THz sources. It holds a great potential for practical applications where high spectral resolving capability is required.https://doi.org/10.1515/nanoph-2021-0380bound state in the continuumterahertzthermal emitter |
spellingShingle | Sun Kaili Zhao Zongshan Cai Yangjian Levy Uriel Han Zhanghua Ultra-narrowband and highly-directional THz thermal emitters based on the bound state in the continuum Nanophotonics bound state in the continuum terahertz thermal emitter |
title | Ultra-narrowband and highly-directional THz thermal emitters based on the bound state in the continuum |
title_full | Ultra-narrowband and highly-directional THz thermal emitters based on the bound state in the continuum |
title_fullStr | Ultra-narrowband and highly-directional THz thermal emitters based on the bound state in the continuum |
title_full_unstemmed | Ultra-narrowband and highly-directional THz thermal emitters based on the bound state in the continuum |
title_short | Ultra-narrowband and highly-directional THz thermal emitters based on the bound state in the continuum |
title_sort | ultra narrowband and highly directional thz thermal emitters based on the bound state in the continuum |
topic | bound state in the continuum terahertz thermal emitter |
url | https://doi.org/10.1515/nanoph-2021-0380 |
work_keys_str_mv | AT sunkaili ultranarrowbandandhighlydirectionalthzthermalemittersbasedontheboundstateinthecontinuum AT zhaozongshan ultranarrowbandandhighlydirectionalthzthermalemittersbasedontheboundstateinthecontinuum AT caiyangjian ultranarrowbandandhighlydirectionalthzthermalemittersbasedontheboundstateinthecontinuum AT levyuriel ultranarrowbandandhighlydirectionalthzthermalemittersbasedontheboundstateinthecontinuum AT hanzhanghua ultranarrowbandandhighlydirectionalthzthermalemittersbasedontheboundstateinthecontinuum |