Implanted Layer Characterization
In modern semiconductor process technology, ion implantation has become the most important technique to introduce dopant atoms into semiconductor materials. The main advantage of ion implantation technique is its high controllability of process parameters, which influencing dopant distribution profi...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Departement of Electrical Engineering, Faculty of Engineering, Universitas Brawijaya
2016-06-01
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| Series: | Jurnal EECCIS (Electrics, Electronics, Communications, Controls, Informatics, Systems) |
| Subjects: | |
| Online Access: | https://jurnaleeccis.ub.ac.id/index.php/eeccis/article/view/351 |
| _version_ | 1797640032454967296 |
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| author | Adharul Muttaqin Irman Idris |
| author_facet | Adharul Muttaqin Irman Idris |
| author_sort | Adharul Muttaqin |
| collection | DOAJ |
| description | In modern semiconductor process technology, ion implantation has become the most important technique to introduce dopant atoms into semiconductor materials. The main advantage of ion implantation technique is its high controllability of process parameters, which influencing dopant distribution profile. This research was intended to characterize the product of ion implantation machine NV-3204.
Ion implantation characterization successfully produced and evaluated pn-junction diode characteristics. PN-junction diode was fabricated using 100 keV energy and 5x1013 cm-3 dose of phosphorus on a silicon wafer type N<111>. For all measured area, pnjunction diode has junction depth Xj = 1 um, breakdown voltage -45V, built-in voltage 0.8V, and dopant concentration 5x1018 cm-3. Comparing the simulation, this result exhibited that output of ion implantation machine was well controlled. |
| first_indexed | 2024-03-11T13:25:08Z |
| format | Article |
| id | doaj.art-0e00f3e611cb4245be9bb3dea3bfe293 |
| institution | Directory Open Access Journal |
| issn | 2460-8122 |
| language | English |
| last_indexed | 2024-03-11T13:25:08Z |
| publishDate | 2016-06-01 |
| publisher | Departement of Electrical Engineering, Faculty of Engineering, Universitas Brawijaya |
| record_format | Article |
| series | Jurnal EECCIS (Electrics, Electronics, Communications, Controls, Informatics, Systems) |
| spelling | doaj.art-0e00f3e611cb4245be9bb3dea3bfe2932023-11-03T07:20:29ZengDepartement of Electrical Engineering, Faculty of Engineering, Universitas BrawijayaJurnal EECCIS (Electrics, Electronics, Communications, Controls, Informatics, Systems)2460-81222016-06-0111161810.21776/jeeccis.v1i1.351211Implanted Layer CharacterizationAdharul Muttaqin0Irman IdrisJurusan Teknik Elektro Fakultas Teknik, Universitas BrawijayaIn modern semiconductor process technology, ion implantation has become the most important technique to introduce dopant atoms into semiconductor materials. The main advantage of ion implantation technique is its high controllability of process parameters, which influencing dopant distribution profile. This research was intended to characterize the product of ion implantation machine NV-3204. Ion implantation characterization successfully produced and evaluated pn-junction diode characteristics. PN-junction diode was fabricated using 100 keV energy and 5x1013 cm-3 dose of phosphorus on a silicon wafer type N<111>. For all measured area, pnjunction diode has junction depth Xj = 1 um, breakdown voltage -45V, built-in voltage 0.8V, and dopant concentration 5x1018 cm-3. Comparing the simulation, this result exhibited that output of ion implantation machine was well controlled.https://jurnaleeccis.ub.ac.id/index.php/eeccis/article/view/351characterizationcontrollability dopantimplanted layerinstallationion implantation |
| spellingShingle | Adharul Muttaqin Irman Idris Implanted Layer Characterization Jurnal EECCIS (Electrics, Electronics, Communications, Controls, Informatics, Systems) characterization controllability dopant implanted layer installation ion implantation |
| title | Implanted Layer Characterization |
| title_full | Implanted Layer Characterization |
| title_fullStr | Implanted Layer Characterization |
| title_full_unstemmed | Implanted Layer Characterization |
| title_short | Implanted Layer Characterization |
| title_sort | implanted layer characterization |
| topic | characterization controllability dopant implanted layer installation ion implantation |
| url | https://jurnaleeccis.ub.ac.id/index.php/eeccis/article/view/351 |
| work_keys_str_mv | AT adharulmuttaqin implantedlayercharacterization AT irmanidris implantedlayercharacterization |