Transverse ultrafast laser inscription in bulk silicon
In-volume ultrafast laser direct writing of silicon is generally limited by strong nonlinear propagation effects preventing the production of modifications. By using advantageous spectral, temporal, and spatial conditions, we demonstrate that modifications can be repeatably produced inside silicon....
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2021-10-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.3.043037 |
| _version_ | 1797210903976869888 |
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| author | M. Chambonneau M. Blothe Q. Li V. Yu. Fedorov T. Heuermann M. Gebhardt C. Gaida S. Tertelmann F. Sotier J. Limpert S. Tzortzakis S. Nolte |
| author_facet | M. Chambonneau M. Blothe Q. Li V. Yu. Fedorov T. Heuermann M. Gebhardt C. Gaida S. Tertelmann F. Sotier J. Limpert S. Tzortzakis S. Nolte |
| author_sort | M. Chambonneau |
| collection | DOAJ |
| description | In-volume ultrafast laser direct writing of silicon is generally limited by strong nonlinear propagation effects preventing the production of modifications. By using advantageous spectral, temporal, and spatial conditions, we demonstrate that modifications can be repeatably produced inside silicon. Our approach relies on irradiation at ≈2 μm wavelength with temporally distorted femtosecond pulses. These pulses are focused in a way that spherical aberrations of different origins mutually balance, as predicted by point spread function analyses and in good agreement with nonlinear propagation simulations. We also establish the laws governing modification growth on a pulse-to-pulse basis, which allows us to demonstrate transverse inscription inside silicon with various line morphologies depending on the irradiation conditions. We finally show that the production of single-pulse repeatable modifications is a necessary condition for reliable transverse inscription inside silicon. |
| first_indexed | 2024-04-24T10:18:00Z |
| format | Article |
| id | doaj.art-0e0dbaf52d0c498db63a2f5e77a19aad |
| institution | Directory Open Access Journal |
| issn | 2643-1564 |
| language | English |
| last_indexed | 2024-04-24T10:18:00Z |
| publishDate | 2021-10-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review Research |
| spelling | doaj.art-0e0dbaf52d0c498db63a2f5e77a19aad2024-04-12T17:14:50ZengAmerican Physical SocietyPhysical Review Research2643-15642021-10-013404303710.1103/PhysRevResearch.3.043037Transverse ultrafast laser inscription in bulk siliconM. ChambonneauM. BlotheQ. LiV. Yu. FedorovT. HeuermannM. GebhardtC. GaidaS. TertelmannF. SotierJ. LimpertS. TzortzakisS. NolteIn-volume ultrafast laser direct writing of silicon is generally limited by strong nonlinear propagation effects preventing the production of modifications. By using advantageous spectral, temporal, and spatial conditions, we demonstrate that modifications can be repeatably produced inside silicon. Our approach relies on irradiation at ≈2 μm wavelength with temporally distorted femtosecond pulses. These pulses are focused in a way that spherical aberrations of different origins mutually balance, as predicted by point spread function analyses and in good agreement with nonlinear propagation simulations. We also establish the laws governing modification growth on a pulse-to-pulse basis, which allows us to demonstrate transverse inscription inside silicon with various line morphologies depending on the irradiation conditions. We finally show that the production of single-pulse repeatable modifications is a necessary condition for reliable transverse inscription inside silicon.http://doi.org/10.1103/PhysRevResearch.3.043037 |
| spellingShingle | M. Chambonneau M. Blothe Q. Li V. Yu. Fedorov T. Heuermann M. Gebhardt C. Gaida S. Tertelmann F. Sotier J. Limpert S. Tzortzakis S. Nolte Transverse ultrafast laser inscription in bulk silicon Physical Review Research |
| title | Transverse ultrafast laser inscription in bulk silicon |
| title_full | Transverse ultrafast laser inscription in bulk silicon |
| title_fullStr | Transverse ultrafast laser inscription in bulk silicon |
| title_full_unstemmed | Transverse ultrafast laser inscription in bulk silicon |
| title_short | Transverse ultrafast laser inscription in bulk silicon |
| title_sort | transverse ultrafast laser inscription in bulk silicon |
| url | http://doi.org/10.1103/PhysRevResearch.3.043037 |
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