Transverse ultrafast laser inscription in bulk silicon

In-volume ultrafast laser direct writing of silicon is generally limited by strong nonlinear propagation effects preventing the production of modifications. By using advantageous spectral, temporal, and spatial conditions, we demonstrate that modifications can be repeatably produced inside silicon....

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Bibliographic Details
Main Authors: M. Chambonneau, M. Blothe, Q. Li, V. Yu. Fedorov, T. Heuermann, M. Gebhardt, C. Gaida, S. Tertelmann, F. Sotier, J. Limpert, S. Tzortzakis, S. Nolte
Format: Article
Language:English
Published: American Physical Society 2021-10-01
Series:Physical Review Research
Online Access:http://doi.org/10.1103/PhysRevResearch.3.043037